生命周期: | Active | 包装说明: | , |
Reach Compliance Code: | unknown | HTS代码: | 8542.39.00.01 |
风险等级: | 5.63 | JESD-30 代码: | S-XXMA-X |
功能数量: | 1 | 最高工作温度: | 75 °C |
最低工作温度: | -30 °C | 封装主体材料: | UNSPECIFIED |
封装形状: | SQUARE | 封装形式: | MICROELECTRONIC ASSEMBLY |
认证状态: | Not Qualified | 标称供电电压: | 2.4 V |
表面贴装: | NO | 电信集成电路类型: | TELECOM CIRCUIT |
温度等级: | COMMERCIAL EXTENDED | 端子形式: | UNSPECIFIED |
端子位置: | UNSPECIFIED | Base Number Matches: | 1 |
型号 | 品牌 | 获取价格 | 描述 | 数据表 |
HRF-426A0-001E | HOKURIKU |
获取价格 |
Low Power RF Transceiver Module | |
HRF-426A1-003B | HOKURIKU |
获取价格 |
Low Power RF Transceiver Module | |
HRF-429A0-001D | HOKURIKU |
获取价格 |
Low Power RF Transceiver Module | |
HRF-429A1-003A | HOKURIKU |
获取价格 |
Low Power RF Transceiver Module | |
HRF502 | HITACHI |
获取价格 |
Silicon Schottky Barrier Diode for Rectifying | |
HRF502A | HITACHI |
获取价格 |
Silicon Schottky Barrier Diode for Rectifying | |
HRF502ATL | HITACHI |
获取价格 |
Rectifier Diode, Schottky, 1 Phase, 1 Element, 5A, 20V V(RRM), Silicon, DO-214 | |
HRF502ATR | HITACHI |
获取价格 |
Rectifier Diode, Schottky, 1 Phase, 1 Element, 5A, 20V V(RRM), Silicon, DO-214 | |
HRF503A | HITACHI |
获取价格 |
Silicon Schottky Barrier Diode for Rectifying | |
HRF503A | RENESAS |
获取价格 |
RECTIFIER DIODE,SCHOTTKY,35V V(RRM),DO-214AB / SMC |