型号 | 品牌 | 获取价格 | 描述 | 数据表 |
HRAF808G | TSC |
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Isolated 8.0 AMPS. Glass Passivated High Efficient Rectifiers | |
HRB0103A | RENESAS |
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Silicon Schottky Barrier Diode for Low Voltage High Speed Switching, Rectifying | |
HRB0103A | HITACHI |
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Silicon Schottky Barrier Diode for Low Voltage High Speed Switching , Rectifying | |
HRB0103ATL | RENESAS |
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0.1A, SILICON, SIGNAL DIODE | |
HRB0103ATR | HITACHI |
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Rectifier Diode, Schottky, 1 Element, 0.1A, Silicon | |
HRB0103ATR | RENESAS |
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Rectifier Diode, Schottky, 1 Element, 0.1A, Silicon | |
HRB0103B | RENESAS |
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Silicon Schottky Barrier Diode for Low Voltage High Speed Switching , Rectifying | |
HRB0103B | HITACHI |
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Silicon Schottky Barrier Diode for Low Voltage High Speed Switching , Rectifying | |
HRB0103BTL | RENESAS |
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暂无描述 | |
HRB0103BTL | HITACHI |
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Rectifier Diode, Schottky, 2 Element, 0.1A, Silicon |