Datasheet > HR1F3P

HR1F3P

更新时间： 2024-11-25 12:33:47

品牌	Logo	应用领域
TYSEMI		晶体驱动器晶体管开关
页数	文件大小	规格书
3页	212K
描述
Up to 2A High Current Drives Such As IC Outputs and Actuators Available

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中文翻译

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数据手册

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HR1F3P 数据手册

SMD Type

Product specification

HR1F3P

Features

Up to 2A High Current Drives Such As IC Outputs and

Actuators Available

On-chip Bias Resistor

Low Power Consumption During Drive

Absolute Maximum Ratings Ta = 25

Parameter

Collector-Base Voltage

Collector-Emitter Voltage

Emitter-Base Voltage

Symbol

V^CBO

V^CEO

Rating

-60

Unit

-60

V^EBO

-10

Collector Current (DC)

I^C(DC)

-1.0

Collector Current (Pulse)

Base Current (DC)

I^C(pulse)*1

I^B(DC)

P^T*2

T^j

-2.0

-0.02

2.0

Total Power Dissipation

Junction temperature

Storage temperature

150

T^stg

-55 to +150

*1 PW 10ms, Duty Cycle 50%

*2 When 0.7mm x 16cm²ceramic board is used.

Electrical Characteristics Ta = 25

Parameter

Symbol

I^CBO

Testconditons

Min

Typ

Max

-100

Unit

Collector Cut-off Current

V^CB= -60V, I^E= 0

V^CE= -2.0V , I^C= -0.1A

V^CE= -2.0V , I^C= -0.5A

V^CE= -2.0V , I^C= -1.0A

150

100

DC Current Gain

h^FE*

Low Level Output Voltage

Low Level Input Voltage

Input Resistance

V^OL* V^IN= -5.0V, I^C= -0.3A

-0.3

2.86

V^IL*

R¹

V^CE= -5.0V, I^C= -100

1.54

2.2

Emitter-Base Resistance

* PW 350 s, Duty Cycle 2%

R²

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HR1F3P-AY	RENESAS	获取价格	PRE-BIASED "DIGITAL" TRANSISTOR,60V V(BR)CEO,1A I(C),SOT-89
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HR1F3P-T1	NEC	获取价格	Small Signal Bipolar Transistor, 1A I(C), 60V V(BR)CEO, 1-Element, PNP, Silicon, POWER, PL
HR1F3P-T2	NEC	获取价格	Small Signal Bipolar Transistor, 1A I(C), 60V V(BR)CEO, 1-Element, PNP, Silicon, POWER, PL
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