是否Rohs认证: | 符合 | 生命周期: | Active |
Reach Compliance Code: | compliant | 风险等级: | 5.8 |
最大集电极电流 (IC): | 1 A | 最小直流电流增益 (hFE): | 50 |
元件数量: | 1 | 极性/信道类型: | PNP |
最大功率耗散 (Abs): | 2 W | 子类别: | BIP General Purpose Small Signal |
表面贴装: | YES | 晶体管元件材料: | SILICON |
Base Number Matches: | 1 |
型号 | 品牌 | 获取价格 | 描述 | 数据表 |
HR1L3N | RENESAS |
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1A, 60V, PNP, Si, POWER TRANSISTOR, POWER, PLASTIC, SC-62, 3 PIN | |
HR1L3N | NEC |
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On-chip resistor PNP silicon epitaxial transistor For mid-speed switching | |
HR1L3N | TYSEMI |
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Up to 2A High Current Drives Such As IC Outputs and Actuators Available | |
HR1L3N | KEXIN |
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Digital Transistors | |
HR1L3N-AY | RENESAS |
获取价格 |
PRE-BIASED "DIGITAL" TRANSISTOR,60V V(BR)CEO,1A I(C),SOT-89 | |
HR1L3N-AZ | NEC |
获取价格 |
Power Bipolar Transistor, 1A I(C), 60V V(BR)CEO, 1-Element, PNP, Silicon, Plastic/Epoxy, 3 | |
HR1L3N-AZ | RENESAS |
获取价格 |
Power Bipolar Transistor, 1A I(C), 60V V(BR)CEO, 1-Element, PNP, Silicon, Plastic/Epoxy, 3 | |
HR1L3N-T1 | NEC |
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Small Signal Bipolar Transistor, 1A I(C), 60V V(BR)CEO, 1-Element, PNP, Silicon, POWER, PL | |
HR1L3N-T1-AY | RENESAS |
获取价格 |
PRE-BIASED "DIGITAL" TRANSISTOR,60V V(BR)CEO,1A I(C),SOT-89 | |
HR1L3N-T1-AZ | RENESAS |
获取价格 |
Built-in Resistor Bipolar Transistors, POMM, / |