HR1L2Q

更新时间： 2024-11-24 21:55:03

品牌	Logo	应用领域
日电电子 - NEC		晶体开关晶体管功率双极晶体管
页数	文件大小	规格书
6页	122K
描述
On-chip resistor PNP silicon epitaxial transistor For mid-speed switching

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中文翻译

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技术参数
数据手册

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HR1L2Q 技术参数

生命周期：	Obsolete	包装说明：	POWER, PLASTIC, SC-62, 3 PIN
Reach Compliance Code：	unknown	风险等级：	5.76
Is Samacsys：	N	其他特性：	BUILT-IN BIAS RESISTOR RATIO IS 10
外壳连接：	COLLECTOR	最大集电极电流 (IC)：	1 A
集电极-发射极最大电压：	60 V	配置：	SINGLE WITH BUILT-IN RESISTOR
最小直流电流增益 (hFE)：	50	JESD-30 代码：	R-PSSO-F3
元件数量：	1	端子数量：	3
最高工作温度：	150 °C	封装主体材料：	PLASTIC/EPOXY
封装形状：	RECTANGULAR	封装形式：	SMALL OUTLINE
极性/信道类型：	PNP	功耗环境最大值：	2 W
认证状态：	Not Qualified	表面贴装：	YES
端子形式：	FLAT	端子位置：	SINGLE
晶体管应用：	SWITCHING	晶体管元件材料：	SILICON
Base Number Matches：	1

HR1L2Q 数据手册

DATA SHEET

COMPOUND TRANSISTOR

HR1 SERIES

on-chip resistor PNP silicon epitaxial transistor

For mid-speed switching

FEATURES

PACKAGE DRAWING (UNIT: mm)

•

Up to 2A high current drives such as IC outputs and actuators

available

•

On-chip bias resistor

Low power consumption during drive

HR1 SERIES LISTS

Products

HR1A3M

HR1F3P

HR1L3N

HR1A4,

Marking

R¹(KΩ)

1.0

R²(KΩ)

1.0

2.2

4.7

HR1L2Q

HR1F2Q

HR1A4A

0.47

0.22

−

4.7

2.2

ABSOLUTE MAXIMUM RATINGS (Ta = 25°C)

Parameter

Collector to base voltage

Collector to emitter voltage

Emitter to base voltage

Collector current (DC)

Collector current (Pulse)

Base current (DC)

Symbol

V^CBO

V^CEO

V^EBO

I^C(DC)

I^C(pulse)*

I^B(DC)

P^T**

T^j

Ratings

−60

Unit

−60

−10

−1.0

−2.0

−0.02

2.0

Total power dissipation

Junction temperature

Storage temperature

°C

150

T^stg

−55 to +150

* PW ≤ 10 ms, duty cycle ≤ 50 %

** When 0.7 mm × 16 cm²ceramic board is used

The information in this document is subject to change without notice. Before using this document, please

confirm that this is the latest version.

Not all devices/types available in every country. Please check with local NEC representative for

availability and additional information.

Document No. D16184EJ2V0DS00 (2nd edition)

Date Published April 2002 N CP(K)

Printed in Japan

2002

1998

12 3 4 5 6

中文翻译

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与HR1L2Q相关器件

型号	品牌	获取价格	描述	数据表
HR1L2Q-AY	RENESAS	获取价格	PRE-BIASED "DIGITAL" TRANSISTOR,60V V(BR)CEO,1A I(C),SOT-89
HR1L2Q-AZ	RENESAS	获取价格	1A, 60V, PNP, Si, POWER TRANSISTOR
HR1L2Q-T1	NEC	获取价格	1000mA, 60V, PNP, Si, SMALL SIGNAL TRANSISTOR, POWER, PLASTIC, SC-62, 3 PIN
HR1L2Q-T2-AY	RENESAS	获取价格	PRE-BIASED "DIGITAL" TRANSISTOR,60V V(BR)CEO,1A I(C),SOT-89
HR1L2Q-T2-AZ	RENESAS	获取价格	PRE-BIASED "DIGITAL" TRANSISTOR,60V V(BR)CEO,1A I(C),SOT-89
HR1L3N	RENESAS	获取价格	1A, 60V, PNP, Si, POWER TRANSISTOR, POWER, PLASTIC, SC-62, 3 PIN
HR1L3N	NEC	获取价格	On-chip resistor PNP silicon epitaxial transistor For mid-speed switching
HR1L3N	TYSEMI	获取价格	Up to 2A High Current Drives Such As IC Outputs and Actuators Available
HR1L3N	KEXIN	获取价格	Digital Transistors
HR1L3N-AY	RENESAS	获取价格	PRE-BIASED "DIGITAL" TRANSISTOR,60V V(BR)CEO,1A I(C),SOT-89

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