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HPA600R380PC-G PDF预览

HPA600R380PC-G

更新时间: 2024-11-13 17:01:31
品牌 Logo 应用领域
华润微 - CRMICRO /
页数 文件大小 规格书
10页 866K
描述
TO-220F

HPA600R380PC-G 数据手册

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R
Silicon N-Channel Power MOSFET  
HPA600R380PC-G  
General Description  
VDSS(Tjmax)  
ID  
650  
11  
V
A
HPA600R380PC-G, the silicon N-channel Enhanced  
MOSFETs, is obtained by the super junction technology which  
reduces the conduction loss, improve switching performance and  
enhance the avalanche energy. The transistor can be used in  
various power switching circuit for system miniaturization and  
higher efficiency. The package type is TO-220F, which accords  
with the RoHS standard.  
PD(TC=25)  
RDS(ON)Typ  
Eoss@400V  
25  
W
uJ  
0.35  
1.4  
Features  
Fast Switching  
Low Gate Charge  
Low Reverse transfer capacitances  
100% Single Pulse avalanche energy Test  
Halogen Free  
Applications:  
Power switch circuit of adaptor and charger.  
AbsoluteTj= 25unless otherwise specified:  
Parameter  
Symbol  
VDSS  
Rating  
Units  
Drain-to-Source Voltage(VGS=0V)  
Continuous Drain Current TC = 25 °C  
Pulsed Drain Current TC = 25 °C  
Gate-to-Source Voltage  
600  
11  
V
A
a1  
ID  
a2  
33  
A
IDM  
VGSS  
±30  
210  
V
a3  
Single Pulse Avalanche Energy  
Peak Diode Recovery dv/dt  
mJ  
V/ns  
V/ns  
A/us  
W
EAS  
a4  
15  
dv/dt  
MOSFET dv/dt ruggedness  
dv/dt  
dif/dt  
PD  
50  
Maximum diode communication speed  
Power Dissipation(TC=25°C )  
500  
25  
Operating and Storage Temperature Range  
Maximum Temperature for Soldering  
–55…+150  
300  
TJTstg  
TL  
WUXI CHINA RESOURCES HUAJING MICROELECTRONICS CO., LTD.  
Page 1 of 10  
2019V02  

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