R
○
Silicon N-Channel Power MOSFET
HPA600R380PC-G
General Description:
VDSS(Tjmax)
ID
650
11
V
A
HPA600R380PC-G, the silicon N-channel Enhanced
MOSFETs, is obtained by the super junction technology which
reduces the conduction loss, improve switching performance and
enhance the avalanche energy. The transistor can be used in
various power switching circuit for system miniaturization and
higher efficiency. The package type is TO-220F, which accords
with the RoHS standard.
PD(TC=25℃)
RDS(ON)Typ
Eoss@400V
25
W
Ω
uJ
0.35
1.4
Features:
Fast Switching
Low Gate Charge
Low Reverse transfer capacitances
100% Single Pulse avalanche energy Test
Halogen Free
Applications:
Power switch circuit of adaptor and charger.
Absolute(Tj= 25℃ unless otherwise specified):
Parameter
Symbol
VDSS
Rating
Units
Drain-to-Source Voltage(VGS=0V)
Continuous Drain Current TC = 25 °C
Pulsed Drain Current TC = 25 °C
Gate-to-Source Voltage
600
11
V
A
a1
ID
a2
33
A
IDM
VGSS
±30
210
V
a3
Single Pulse Avalanche Energy
Peak Diode Recovery dv/dt
mJ
V/ns
V/ns
A/us
W
EAS
a4
15
dv/dt
MOSFET dv/dt ruggedness
dv/dt
dif/dt
PD
50
Maximum diode communication speed
Power Dissipation(TC=25°C )
500
25
Operating and Storage Temperature Range
Maximum Temperature for Soldering
–55…+150
300
TJ,Tstg
TL
℃
℃
WUXI CHINA RESOURCES HUAJING MICROELECTRONICS CO., LTD.
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2019V02