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HPA72R-3 PDF预览

HPA72R-3

更新时间: 2022-01-21 17:52:00
品牌 Logo 应用领域
其他 - ETC 晶体晶体管
页数 文件大小 规格书
4页 115K
描述
TRANSISTOR | BJT | NPN | 800V V(BR)CEO | 7A I(C) | TO-247VAR

HPA72R-3 数据手册

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Ordering number:ENN3271  
NPN Triple Diffused Planar Silicon Composite Transistor  
HPA72R  
Ultrahigh-Definition CRT Display  
Horizontal Deflection Output Applications  
Features  
Package Dimensions  
unit:mm  
· High speed.  
· High breakdown voltage.  
· High-speed damper diode placed in one package.  
· Adoption of MBIT process.  
2039D  
[HPA72R]  
16.0  
5.6  
3.4  
· High reliability.  
3.1  
2.0  
· Micaless package facilitating easy mounting.  
2.8  
2.0  
1.0  
0.6  
1 : Base  
1
2
3
2 : Collector  
3 : Emitter  
5.45  
5.45  
SANYO : TO3PML  
Specifications  
Absolute Maximum Ratings at Ta = 25˚C  
Parameter  
Collector-to-Base Voltage  
Symbol  
Conditions  
Ratings  
Unit  
V
V
1500  
800  
6
CBO  
Collector-to-Emitter Voltage  
Emitter-to-Base Voltage  
Collector Current  
V
V
CEO  
V
V
EBO  
I
7
A
C
Collector Current (Pulse)  
Diode Forward Current  
Diode Forward Current (Pulse)  
I
16  
4
A
CP  
I
A
O
PW100µs, duty50%  
Tc=25°C  
I
7
A
OP  
60  
3
W
Total Power Dissipation  
P
T
Ta=25°C  
W
˚C  
Junction Temperature  
Storage Temperature  
Tj  
150  
˚C  
Tstg  
–55 to +150  
Electrical Characteristics at Ta = 25˚C  
Ratings  
typ  
Parameter  
Symbol  
Conditions  
Unit  
min  
max  
Collector Cutoff Current  
I
V
I
=1500V, I =0  
5
mA  
V
CBO  
CB  
E
Collector Sustain Voltage  
Emitter Cutoff Current  
V
=100mA, I =0  
800  
CEO(sus)  
C
B
I
V
V
V
=4V, I =0  
1.0  
10*  
mA  
EBO  
(1)  
EB  
CE  
CE  
C
h
h
=5V, I =1A  
8
FE  
FE  
C
DC Current Gain  
(2)  
=5V, I =4A  
C
4*  
* : The HPA72R is classified by 4A h as follows :  
Continued on next page.  
FE  
4
2
6
5
3
8
7
4
10  
Any and all SANYO products described or contained herein do not have specifications that can handle  
applications that require extremely high levels of reliability, such as life-support systems, aircraft’s  
control systems, or other applications whose failure can be reasonably expected to result in serious  
physical and/or material damage. Consult with your SANYO representative nearest you before using  
any SANYO products described or contained herein in such applications.  
SANYO assumes no responsibility for equipment failures that result from using products at values that  
exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges,or other  
parameters) listed in products specifications of any and all SANYO products described or contained  
herein.  
SANYO Electric Co.,Ltd. Semiconductor Company  
TOKYO OFFICE Tokyo Bldg., 1-10, 1 Chome, Ueno, Taito-ku, TOKYO, 110-8534 JAPAN  
82599TH (KT)/3230MO, TS No.3271–1/4  

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