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HN58X25256I PDF预览

HN58X25256I

更新时间: 2024-01-19 00:29:34
品牌 Logo 应用领域
瑞萨 - RENESAS 存储可编程只读存储器电动程控只读存储器电可擦编程只读存储器
页数 文件大小 规格书
22页 182K
描述
Serial Peripheral Interface 128k EEPROM (16-kword 】 8-bit) 256k EEPROM (32-kword 】 8-bit) Electrically Erasable and Programmable Read Only Memory

HN58X25256I 技术参数

生命周期:Obsolete零件包装代码:SOP
包装说明:0.150 INCH, 3.90 X 4.89 MM, 1.27 MM PITCH, LEAD FREE, PLASTIC, SOP-8针数:8
Reach Compliance Code:compliantECCN代码:EAR99
HTS代码:8542.32.00.51风险等级:5.73
最大时钟频率 (fCLK):3 MHz数据保留时间-最小值:10
耐久性:100000 Write/Erase CyclesJESD-30 代码:R-PDSO-G8
长度:4.89 mm内存密度:262144 bit
内存集成电路类型:EEPROM内存宽度:8
功能数量:1端子数量:8
字数:32768 words字数代码:32000
工作模式:SYNCHRONOUS最高工作温度:85 °C
最低工作温度:-40 °C组织:32KX8
封装主体材料:PLASTIC/EPOXY封装代码:SOP
封装等效代码:SOP8,.25封装形状:RECTANGULAR
封装形式:SMALL OUTLINE并行/串行:SERIAL
峰值回流温度(摄氏度):NOT SPECIFIED电源:2/5 V
认证状态:Not Qualified座面最大高度:1.73 mm
串行总线类型:SPI最大待机电流:0.000003 A
子类别:EEPROMs最大压摆率:0.004 mA
最大供电电压 (Vsup):5.5 V最小供电电压 (Vsup):1.8 V
标称供电电压 (Vsup):2.5 V表面贴装:YES
技术:CMOS温度等级:INDUSTRIAL
端子形式:GULL WING端子节距:1.27 mm
端子位置:DUAL处于峰值回流温度下的最长时间:NOT SPECIFIED
宽度:3.9 mm最长写入周期时间 (tWC):8 ms
写保护:HARDWARE/SOFTWAREBase Number Matches:1

HN58X25256I 数据手册

 浏览型号HN58X25256I的Datasheet PDF文件第3页浏览型号HN58X25256I的Datasheet PDF文件第4页浏览型号HN58X25256I的Datasheet PDF文件第5页浏览型号HN58X25256I的Datasheet PDF文件第7页浏览型号HN58X25256I的Datasheet PDF文件第8页浏览型号HN58X25256I的Datasheet PDF文件第9页 
HN58X25128I/HN58X25256I  
(Ta = 40 to +85°C, VCC = 1.8 V to 5.5 V)  
Parameter  
Clock frequency  
Symbol  
fC  
Alt  
fSCK  
tCSS1  
tCSS2  
tCS  
Min  
Max  
Unit  
MHz  
ns  
Notes  
3
S active setup time  
S not active setup time  
S deselect time  
S active hold time  
S not active hold time  
Clock high time  
tSLCH  
tSHCH  
tSHSL  
tCHSH  
tCHSL  
tCH  
100  
100  
150  
100  
100  
150  
150  
1
ns  
ns  
tCSH  
ns  
ns  
tCLH  
tCLL  
tRC  
ns  
1
1
2
2
Clock low time  
tCL  
ns  
Clock rise time  
tCLCH  
tCHCL  
tDVCH  
tCHDX  
tHHCH  
tHLCH  
tCHHL  
tCHHH  
µs  
µs  
ns  
Clock fall time  
tFC  
30  
1
Data in setup time  
tDSU  
tDH  
Data in hold time  
50  
ns  
Clock low hold time after HOLD not active  
Clock low hold time after HOLD active  
Clock high setup time before HOLD active  
Clock high setup time before HOLD not  
active  
140  
90  
ns  
ns  
120  
120  
ns  
ns  
Output disable time  
Clock low to output valid  
Output hold time  
tSHQZ  
tCLQV  
tCLQX  
tQLQH  
tQHQL  
tHHQX  
tHLQZ  
tW  
tDIS  
tV  
0
200  
120  
100  
100  
100  
100  
8
ns  
ns  
2
tHO  
tRO  
tFO  
tLZ  
ns  
Output rise time  
106  
ns  
2
2
2
2
Output fall time  
ns  
HOLD high to output low-Z  
HOLD low to output low-Z  
Write time  
ns  
tHZ  
tWC  
ns  
ms  
cycles  
Erase / Write Endurance  
Notes: 1. tCH + tCL 1/fC  
3
2. Value guaranteed by characterization, not 100% tested in production.  
3. Value guaranteed by characterization, not 100% tested in products (Ta = 25°C).  
Rev.3.00, Jul.06.2005, page 6 of 20  

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