HN4C08J
TOSHIBA Transistor Silicon NPN Epitaxial Type (PCT Process)
HN4C08J
Low Frequency Power Amplifer Applications
Unit: mm
Power Switching Application
z
z
High DC Current Gain : hFE = 100~320
Low Saturation Voltage : VCE(sat)=0.4V (Max.)
: (IC = 500mA , IB = 20mA)
Absolute Maximum Ratings (Ta = 25°C)
(Q1, Q2 Common)
Characteristic
Symbol
Rating
Unit
Collector-base voltage
Collector-emitter voltage
Emitter-base voltage
Collector current
V
V
V
30
25
V
V
CBO
CEO
EBO
1.BASE1
2.EMITTER
3.BASE2
4.COLLECTOR2 (C2)
5.COLLECTOR1 (C1)
(B1)
(E)
(B2)
5
V
I
800
mA
mA
mW
°C
°C
C
Base current
I
160
B
JEDEC
JEITA
―
―
Collector power dissipation
Junction temperature
Storage temperature range
P *
300
C
T
j
150
TOSHIBA
2-3L1A
T
−55~150
Weight: 0.014g (typ.)
stg
Note: Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the
significant change in temperature, etc.) may cause this product to decrease in the reliability significantly even
if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum
ratings.
Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook
(“Handling Precautions”/“Derating Concept and Methods”) and individual reliability data (i.e. reliability test
report and estimated failure rate, etc).
*Total rating. Power dissipation per element should not exceed 200mW.
Electrical Characteristics (Ta = 25°C) (Q1,Q2 Common)
Test
Circuit
Characteristic
Symbol
Test Condition
= 30V, I = 0
Min
Typ.
Max
Unit
Collector cut-off current
I
―
V
V
―
―
―
―
―
―
―
0.1
0.1
―
μA
μA
V
CBO
CB
EB
E
Emitter cut-off current
I
―
= 5V, I = 0
C
EBO
Collector-Emitter Breakdown Voltage
Emitter-Base Breakdown Voltage
V
V
―
I
C
I
E
= 10mA, I = 0
25
5
(BR)CEO
(BR)EBO
B
―
= 0.1mA, I = 0
―
V
C
h
h
―
―
V
V
= 1V, I = 100mA
100
320
FE(1)
FE(2)
CE
CE
C
DC current gain
= 1V, I = 800mA
40
―
C
Collector-emitter saturation voltage
Collector-emitter saturation voltage
Transition frequency
V
―
―
―
―
I
= 500mA, I = 20mA
―
0.5
―
―
―
0.4
0.8
―
V
V
CE (sat)
C
B
V
V
V
V
= 1V, I = 10mA
C
BE
CE
CE
CB
f
= 5V, I = 10mA
120
13
MHz
pF
T
C
Collector output capacitance
C
= 10V, I = 0, f = 1MHz
―
―
ob
E
1
2007-11-01