5秒后页面跳转
HMS51232M4G-20 PDF预览

HMS51232M4G-20

更新时间: 2024-01-13 12:35:34
品牌 Logo 应用领域
HANBIT 动态存储器
页数 文件大小 规格书
10页 82K
描述
Synchronous DRAM Module 32Mbyte(4Mx64-Bit), 144pin SO-DIMM, 4Banks, 4K Ref., 3.3V

HMS51232M4G-20 数据手册

 浏览型号HMS51232M4G-20的Datasheet PDF文件第2页浏览型号HMS51232M4G-20的Datasheet PDF文件第3页浏览型号HMS51232M4G-20的Datasheet PDF文件第4页浏览型号HMS51232M4G-20的Datasheet PDF文件第5页浏览型号HMS51232M4G-20的Datasheet PDF文件第6页浏览型号HMS51232M4G-20的Datasheet PDF文件第7页 
HANBit  
HSD4M64B4W  
Synchronous DRAM Module 32Mbyte(4Mx64-Bit), 144pin SO-DIMM,  
4Banks, 4K Ref., 3.3V  
Part No. HSD4M64B4W  
GENERAL DESCRIPTION  
The HSD4M64B4W is a 4M x 64 bit Synchronous Dynamic RAM high density memory module. The module consists of  
four CMOS 1M x 16 bit x 4banks Synchronous DRAMs in TSOP-II 400mil packages on a 144-pin glass-epoxy substrate.  
Two 0.1uF decoupling capacitors are mounted on the printed circuit board in parallel for each SDRAM. The  
HSD4M64B4W is a SO-DIMM(Small Outline Dual in line Memory Module) and is intended for mounting into 144-pin edge  
connector sockets. Synchronous design allows precise cycle control with the use of system clock. I/O transactions are  
possible on every clock cycle. Range of operating frequencies, programmable latencies allows the same device to be  
useful for a variety of high bandwidth, high performance memory system applications All module components may be  
powered from a single 3.3V DC power supply and all inputs and outputs are LVTTL-compatible.  
FEATURES  
Part Identification  
HSD4M64B4W-10 : 100MHz (CL=2)  
HSD4M64B4W-10L : 100MHz (CL=3)  
HSD4M64B4W-12 : 125MHz (CL=3)  
HSD4M64B4W-13 : 133MHz (CL=3)  
Burst mode operation  
Auto & self refresh capability (4096 Cycles/64ms)  
LVTTL compatible inputs and outputs  
Single 3.3V ±0.3V power supply  
MRS cycle with address key programs  
- Latency (Access from column address)  
- Burst length (1, 2, 4, 8 & Full page)  
- Data scramble (Sequential & Interleave)  
All inputs are sampled at the positive going edge of the system clock  
The used device is 1M x 16bit x 4Banks SDRAM  
URLwww.hbe.co.kr  
Rev.0.0 (March / 2002)  
1
HANBit Electronics Co.,Ltd.  

与HMS51232M4G-20相关器件

型号 品牌 获取价格 描述 数据表
HMS51232M4L HANBIT

获取价格

SRAM MODULE 2Mbyte (512K x 32-Bit), LOW POWER, 72-Pin SIMM 5V
HMS51232M4L-10 HANBIT

获取价格

SRAM MODULE 2Mbyte (512K x 32-Bit), LOW POWER, 72-Pin SIMM 5V
HMS51232M4L-12 HANBIT

获取价格

SRAM MODULE 2Mbyte (512K x 32-Bit), LOW POWER, 72-Pin SIMM 5V
HMS51232M4L-15 HANBIT

获取价格

SRAM MODULE 2Mbyte (512K x 32-Bit), LOW POWER, 72-Pin SIMM 5V
HMS51232M4L-17 HANBIT

获取价格

SRAM MODULE 2Mbyte (512K x 32-Bit), LOW POWER, 72-Pin SIMM 5V
HMS51232M4L-20 HANBIT

获取价格

SRAM MODULE 2Mbyte (512K x 32-Bit), LOW POWER, 72-Pin SIMM 5V
HMS51232M4V HANBIT

获取价格

SRAM MODULE 2Mbyte (512K x 32-Bit), 3.3V
HMS51232M4V-10 HANBIT

获取价格

SRAM MODULE 2Mbyte (512K x 32-Bit), 3.3V
HMS51232M4V-12 HANBIT

获取价格

SRAM MODULE 2Mbyte (512K x 32-Bit), 3.3V
HMS51232M4V-15 HANBIT

获取价格

SRAM MODULE 2Mbyte (512K x 32-Bit), 3.3V