HANBit
HMS51232M4L
H A N
SRAM MODULE 2Mbyte (512K x 32-Bit), LOW POWER, 72-Pin
B I T
HMS51232M4L
SIMM 5V
Part No.
GENERAL DESCRIPTION
The HMS51232M4L is a static random access memory (SRAM) module containing 524,288 words organized in
a x32-bit configuration. The module consists of four 512K x 8 SRAMs mounted on a 72-pin, single-sided, FR4-
printed circuit board.
The HMS51232M4L also support low data retention voltage for battery back-up operations with low data retention
current. Four chip enable inputs, (/CE_UU1, /CE_UM1, /CE_LM1 and /CE_LL1) are used to enable the module’s
4 bytes independently. Output enable (/OE) and write enable (/WE) can set the memory input and output.
Data is written into the SRAM memory when write enable (/WE) and chip enable (/CE) inputs are both LOW.
Reading is accomplished when /WE remains HIGH and /CE and output enable (/OE) are LOW.
For reliability, this SRAM module is designed as multiple power and ground pin. All module components may be
powered from a single +5V DC power supply and all inputs and outputs are fully TTL-compatible.
FEATURES
PIN ASSIGNMENT
A18 37
A16 38
Vss 39
A6 40
Vcc 41
A5 42
A4 43
Vcc 44
NC 45
Vss
A3
A2
A1
A0
Vcc
A11
/ OE
A10
Vcc 10
NC 11
1
2
3
4
5
6
7
8
9
Access time : 55, 70ns
High-density 2MByte design
High-reliability, low-power design
Single +5V ±0.5V power supply
Low data retention voltage : 2V(min)
Three state output and TTL-compatible
FR4-PCB design
/ CE_UM1 46
DQ23 47
DQ16 48
DQ17 49
DQ18 50
DQ22 51
DQ21 52
DQ20 53
DQ19 54
Vcc 55
/ CE_LL1 12
DQ7 13
DQ0 14
DQ1 15
DQ2 16
DQ6 17
DQ5 18
DQ4 19
DQ3 20
A15 21
Low profile 72-Pin SIMM
A14 56
A12 57
A7 58
OPTIONS
MARKING
A17 22
Vcc 59
A8 60
/ WE 23
A13 24
Timing
A9 61
Vcc 25
DQ24 62
DQ25 63
DQ26 64
NC 65
DQ8 26
DQ9 27
DQ10 28
NC 29
55ns access
70ns access
Packages
-55
-70
/ CE_UU1 66
DQ31 67
DQ30 68
DQ29 69
DQ28 70
DQ27 71
Vss 72
Vcc 30
/ CE_LM1 31
DQ15 32
DQ14 33
DQ13 34
DQ12 35
DQ11 36
72-pin SIMM
M
72-Pin SIMM
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