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HMP125V7EFR4C-C4 PDF预览

HMP125V7EFR4C-C4

更新时间: 2024-11-06 05:36:23
品牌 Logo 应用领域
海力士 - HYNIX 存储内存集成电路动态存储器双倍数据速率时钟
页数 文件大小 规格书
24页 548K
描述
240pin DDR2 VLP Registered DIMMs

HMP125V7EFR4C-C4 技术参数

是否Rohs认证: 符合生命周期:Obsolete
零件包装代码:DIMM包装说明:DIMM, DIMM240,40
针数:240Reach Compliance Code:compliant
ECCN代码:EAR99HTS代码:8542.32.00.36
风险等级:5.84Is Samacsys:N
访问模式:SINGLE BANK PAGE BURST最长访问时间:0.5 ns
其他特性:AUTO/SELF REFRESH; SEATED HGT-NOM; WD-MAX最大时钟频率 (fCLK):267 MHz
I/O 类型:COMMONJESD-30 代码:R-XDMA-N240
长度:133.35 mm内存密度:2147483648 bit
内存集成电路类型:DDR DRAM内存宽度:8
功能数量:1端口数量:1
端子数量:240字数:268435456 words
字数代码:256000000工作模式:SYNCHRONOUS
最高工作温度:55 °C最低工作温度:
组织:256MX8输出特性:3-STATE
封装主体材料:UNSPECIFIED封装代码:DIMM
封装等效代码:DIMM240,40封装形状:RECTANGULAR
封装形式:MICROELECTRONIC ASSEMBLY峰值回流温度(摄氏度):260
电源:1.8 V认证状态:Not Qualified
刷新周期:8192座面最大高度:18.29 mm
自我刷新:YES最大待机电流:1.01 A
子类别:DRAMs最大压摆率:4.43 mA
最大供电电压 (Vsup):1.9 V最小供电电压 (Vsup):1.7 V
标称供电电压 (Vsup):1.8 V表面贴装:NO
技术:CMOS温度等级:COMMERCIAL
端子形式:NO LEAD端子节距:1 mm
端子位置:DUAL处于峰值回流温度下的最长时间:20
宽度:4 mmBase Number Matches:1

HMP125V7EFR4C-C4 数据手册

 浏览型号HMP125V7EFR4C-C4的Datasheet PDF文件第2页浏览型号HMP125V7EFR4C-C4的Datasheet PDF文件第3页浏览型号HMP125V7EFR4C-C4的Datasheet PDF文件第4页浏览型号HMP125V7EFR4C-C4的Datasheet PDF文件第5页浏览型号HMP125V7EFR4C-C4的Datasheet PDF文件第6页浏览型号HMP125V7EFR4C-C4的Datasheet PDF文件第7页 
240pin DDR2 VLP Registerd DIMMs based on 1Gb E version  
This Hynix DDR2 VLP (Very Low Profile) registered Dual In-Line Memory Module (DIMM) series consists of 1Gb E ver-  
sion DDR2 SDRAMs in Fine Ball Grid Array (FBGA) packages on a 240pin glass-epoxy substrate. This Hynix 1Gb E ver-  
sion based VLP Registered DIMM series provide a high performance 8 byte interface in 133.35mm width form factor of  
industry standard. It is suitable for easy interchange and addition.  
ORDERING INFORMATION  
# of  
DRAMs  
# of  
Ranks  
Parity  
Support  
Part Name  
Density  
Org.  
Materials  
HMP112V7EFR8C-C4/Y5/S6  
HMP125V7EFR4C-C4/Y5/S6  
HMP351V7EMR4C-C4/Y5/S6  
1GB  
2GB  
4GB  
128Mbx72  
256Mbx72  
512Mbx72  
9
1
1
2
Halogen Free  
Halogen Free  
Halogen Free  
O
O
O
18  
36  
SPEED GRADE & KEY PARAMETERS  
C4 (DDR2-533)  
Y5 (DDR2-667)  
S6 (DDR2-800)  
Unit  
Speed@CL3  
Speed@CL4  
Speed@CL5  
Speed@CL6  
CL-tRCD-tRP  
400  
533  
-
400  
533  
667  
-
-
Mbps  
Mbps  
Mbps  
Mbps  
tCK  
400  
533  
800  
6-6-6  
-
4-4-4  
5-5-5  
This document is a general product description and is subject to change without notice. Hynix Semiconductor does not assume any  
responsibility for use of circuits described. No patent licenses are implied.  
Rev. 0.3 / Sep. 2008  
1

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