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HMF4M32B8V

更新时间： 2024-11-19 05:36:19
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HANBIT 闪存
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12页 211K
描述
Flash-ROM Module 16MByte (4Mx32Bit), 72Pin-SO-DIMM, 3.3V Design

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HMF4M32B8V 数据手册

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HANBit  
HMF4M32B8V  
Flash-ROM Module 16MByte (4Mx32Bit), 72Pin-SO-DIMM, 3.3V  
Design  
Part No. HMF4M32B8V  
GENERAL DESCRIPTION  
The HMF4M32B8V is a high-speed flash read only memory (FROM) module containing 8,388,608words organized in a  
x32bit configuration. The module consists of eight 1M x 16 FROM mounted on a 72-pin SO-DIMM type, double - sided, FR4-  
printed circuit board.  
Commands are written to the command register using standard microprocessor write timings.  
Register contents serve as input to an internal state-machine, which controls the erase and programming circuitry. Write cycles  
also internally latch addresses and data needed for the programming and erase operations. Reading data out of the device is  
similar to reading from 12.0V flash or EPROM devices.  
Output enable (/OE) and write enable (/WE) can set the memory input and output. The host system can detect a program or  
erase operation is complete by observing the Ready Pin, or reading the DQ7(Data # Polling) and DQ6(Toggle) status bits.  
When FROM module is disable condition the module is becoming power standby mode, system designer can get low-power  
design. All module components may be powered from a single +3.0V DC power supply and all inputs and outputs are LVTTL-  
compatible.  
FEATURES  
PIN ASSIGNMENT  
Š Access time: 70, 80, 90, 120ns  
PIN Symbol PIN Symbol PIN  
Symbol  
DQ29  
DQ30  
DQ31  
NC  
PIN  
61  
62  
63  
64  
65  
66  
67  
68  
69  
70  
71  
72  
Symbol  
A8  
Š High-density 16MByte design  
Š High-reliability, low-power design  
Š Single + 3.0V ± 0.5V power supply  
Š All in/outputs are LVTTL-compatible  
Š FR4-PCB design  
1
2
Vss  
/RESET  
DQ0  
21  
22  
23  
24  
25  
26  
27  
28  
29  
30  
31  
32  
33  
34  
35  
36  
37  
38  
39  
40  
DQ15  
/CE_4L  
/CE_3H  
DQ16  
DQ17  
DQ18  
DQ19  
DQ20  
DQ21  
Vcc  
41  
42  
43  
44  
45  
46  
47  
48  
49  
50  
51  
52  
53  
54  
55  
56  
57  
58  
59  
60  
A7  
3
A6  
4
DQ1  
A5  
5
DQ2  
/CE_4H  
/CE_3L  
A19  
A4  
Š Minimum 10,000,000 write/erase cycle  
Š Sector erases architecture  
6
DQ3  
A3  
7
DQ4  
A2  
8
DQ5  
/OE  
A1  
OPTIONS  
Š Timing  
MARKING  
9
DQ6  
/WE  
A0  
10  
11  
12  
13  
14  
15  
16  
17  
18  
19  
20  
Vcc  
A18  
A20  
NC  
Vss  
70ns access  
80ns access  
90ns access  
120ns access  
Š Packages  
72-pin SO-DIMM  
-70  
-80  
-90  
-120  
DQ7  
DQ22  
DQ23  
/CE_1H  
/CE_2H  
DQ24  
DQ25  
DQ26  
DQ27  
Vss  
A17  
/CE_1L  
/CE_2L  
DQ8  
A16  
A15  
A14  
DQ9  
A13  
B
DQ10  
DQ11  
DQ12  
DQ13  
DQ14  
A12  
A11  
A10  
Vcc  
DQ28  
A9  
1
URL :www.hbe.co.kr  
HANBit Electronics Co., Ltd.  
REV.00(October,2003)  
1234567...12

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HMF4M32B8V-120 HANBIT

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HMF4M32B8VG HANBIT

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 		FLASH-ROM MODULE 16MByte (4M x 32-Bit) ,72pin-SODIMM, 3.3V
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HMF4M32B8VN HANBIT

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HMF4M32B8VN-120 HANBIT

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