HANBit
HMF4M32M8G
FLASH-ROM MODULE 16MByte (4M x 32Bit), 72-Pin SIMM, 5V
Part No. HMF4M32M8G
GENERAL DESCRIPTION
The HMF4M32M8G is a high-speed flash read only memory (FROM) module containing 8,388,608 words organized in a
x32bit configuration. The module consists of eight 2M x 8bit FROM mounted on a 72 -pin, double-sided, FR4-printed circuit
board. Commands are written to the command register using standard microprocessor write timings.
Register contents serve as input to an internal state-machine, which controls the erase and programming circuitry. Write
cycles also internally latch addresses and data needed for the programming and erase operations. Reading data out of the
device is similar to reading from 12.0V flash or EPROM devices.
Eight chip enable inputs, (/CE_UU1, /CE_UM1, /CE_LM1, /CE_LL1, /CE_UU2, /CE_UM2, /CE_LM2, CE_LL2) are use d to
enable the module’s 4 bytes independently. Outputs enable (/OE) and write enable (/WE) can set the memory input and
output.When FROM module is disable condition the module is becoming power standby mode, system designer can get low -
power design. All module components may be powered from a single +5V DC power supply and all inputs and outputs are
TTL-compatible.
FEATURES
PIN ASSIGNMENT
w Part Identifications
PIN SYMBOL PIN
SYMBOL
A20
PIN SYMBOL
HMF4M32M8G : 16Mbyte, 72-pin SIMM, Gold
HMF4M32M8 : 16Mbyte, 72-pin SIMM, Solder
wAccess time : 75, 90 and 120ns
w High-density 16MByte design
1
2
Vss
A3
25
26
27
28
29
30
31
32
33
34
35
36
37
38
39
40
41
42
43
44
45
46
47
48
49
50
51
52
53
54
55
56
57
58
59
60
61
62
63
64
65
66
67
68
69
70
71
72
DQ17
DQ18
DQ22
DQ21
DQ20
DQ19
A19
DQ8
3
A2
DQ9
4
A1
DQ10
/CE-LM2
Vcc
w High-reliability, low-power design
w Single + 5V ± 0.5V power supply
w Easy memory expansion
5
A0
6
Vcc
7
A11
/CE-LM1
DQ15
DQ14
DQ13
DQ12
DQ11
A18
8
/OE
A15
w All inputs and outputs are TTL-compatible
w FR4-PCB design
9
A10
A12
10
11
12
13
14
15
16
17
18
19
20
21
22
23
24
/RESET
/CE-LL2
/CE-LL1
DQ7
DQ0
DQ1
DQ2
DQ6
DQ5
DQ4
DQ3
/WE
A17
A7
Vcc
w Low profile 72-pin SIMM
A8
w Minimum 1,000,000 write/erase cycle
w Sectors erase architecture
A9
A16
DQ24
DQ25
DQ26
/CE-UU2
/CE-UU1
DQ31
DQ30
DQ29
DQ28
DQ27
Vss
w Sector group protection
Vss
A6
w Temporary sector group unprotection
w The used device is Am29F016B or MBM29F016-90PFTN
/RY_BY
A5
A4
OPTIONS
w Timing
MARKING
Vcc
/CE-UM2
/CE-UM1
DQ23
DQ16
75ns access
90ns access
120ns access
w Packages
72-pin SIMM
-75
-90
A14
A13
-120
72-PIN SIMM
TOP VIEW
M
1
URL: www.hbe.co.kr
REV.02(August,2002)
HANBit Electronics Co., Ltd.