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HMF4M32M4GL-120 PDF预览

HMF4M32M4GL-120

更新时间: 2024-11-19 05:36:19
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HANBIT /
页数 文件大小 规格书
11页 420K
描述
FLASH-ROM MODULE 16MByte (4M x 32-Bit), 72-Pin SIMM, 5V

HMF4M32M4GL-120 数据手册

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HANBit  
HMF4M32M4GL  
FLASH-ROM MODULE 16MByte (4M x 32-Bit), 72-Pin SIMM, 5V  
Part No. HMF4M32M4GL  
GENERAL DESCRIPTION  
The HMF4M32M4GL is a high-speed flash read only memory (FROM) module containing 4,194,304 words organized in a  
x32bit configuration. The module consists of four 4M x 8bit FROM mounted on a 72 -pin, single-sided, FR4-printed circuit  
board.  
Commands are written to the command register using standard microprocessor write timings.  
Register contents serve as input to an internal state-machine, which controls the erase and programming circuitry. Write  
cycles also internally latch addresses and data needed for the programming and erase operations. Reading data out of the  
device is similar to reading from 12.0V flash or EPROM devices.  
Four chip enable inputs, (/WE, /WE1, /WE2, /WE3) are used to enable the modules 8bits independently. Output enable (/OE)  
and write enable (/WE) can set the memory input and output.  
When FROM module is disable condition the module is becoming power standby mode, system designer can get low -power  
design. All module components may be powered from a single +5V DC power supply and all inputs and outputs are TTL-  
compatible.  
PIN ASSIGNMENT  
FEATURES  
PIN SYMBOL PIN  
SYMBOL  
PIN SYMBOL  
w Access time : 75, 90 and 120ns  
1
Vss  
NC  
25  
26  
27  
28  
29  
30  
31  
32  
33  
34  
35  
36  
37  
38  
39  
40  
41  
42  
43  
44  
45  
46  
47  
48  
DQ17  
DQ18  
DQ19  
DQ20  
DQ21  
Vcc  
49  
50  
51  
52  
53  
54  
55  
56  
57  
58  
59  
60  
61  
62  
63  
64  
65  
66  
67  
68  
69  
70  
71  
72  
/BANK-E0  
A18  
A17  
A16  
A15  
A14  
A13  
A12  
A11  
A10  
Vcc  
A9  
w High-density 16MByte design  
w High-reliability, low-power design  
w Single + 5V ± 0.5V power supply  
w Easy memory expansion  
2
3
DQ0  
4
DQ1  
5
DQ2  
6
DQ3  
w All inputs and outputs are TTL-compatible  
w FR4-PCB design  
7
DQ4  
DQ22  
DQ23  
/WE2  
NC  
8
DQ5  
w Low profile 72-pin SIMM  
9
DQ6  
w Minimum 1,000,000-write/erase cycle  
w Sectors erase architecture  
10  
11  
12  
13  
14  
15  
16  
17  
18  
19  
20  
21  
22  
23  
24  
Vcc  
DQ7  
DQ24  
DQ25  
DQ26  
DQ27  
Vss  
/WE0  
/RY_BY  
DQ8  
w Sector group protection  
A8  
w Temporary sector group unprotect ion  
w The used device is Am29F032B  
A7  
DQ9  
A6  
DQ10  
DQ11  
DQ12  
DQ13  
DQ14  
DQ15  
/WE1  
NC  
DQ28  
DQ29  
DQ30  
DQ31  
/WE3  
NC  
A5  
OPTION  
MARKING  
A4  
A3  
w Timing  
A2  
75ns access  
-75  
-90  
A1  
90ns access  
120ns access  
w Packages  
A0  
-120  
/RESET  
A19  
A20  
A21  
Vss  
DQ16  
/OE  
72-pin SIMM  
M
72-PIN SIMM  
TOP VIEW  
1
URL: www.hbe.co.kr  
REV.02(August,2002)  
HANBit Electronics Co., Ltd.  

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