Datasheet > HMD1M4Z1-5

HMD1M4Z1-5

更新时间： 2024-11-09 03:02:39

品牌	Logo	应用领域
HANBIT		/
页数	文件大小	规格书
6页	193K
描述
4Mbit(1Mx4bit) Fast Page Mode, 1K Refresh, 20Pin ZIP, 5V Design

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中文翻译

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技术参数
数据手册

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HMD1M4Z1-5 技术参数

生命周期：	Contact Manufacturer	包装说明：	,
Reach Compliance Code：	unknown	风险等级：	5.75
Base Number Matches：	1

HMD1M4Z1-5 数据手册

HANBit

HMD1M4Z1

4Mbit(1Mx4bit) Fast Page Mode, 1K Refresh, 20Pin ZIP, 5V Design

Part No. HMD1M4Z1

DESCRIPTION

The HMD1M4Z1 is an 1M x 4 bits Fast Page Mode CMOS DRAMs. Fast Page Mode offers high speed random access of

memory cells

within the same row. Power supply voltage (+5V ), access time (-5, -6), power consumption(Normal or Low power), and package

type (ZIP) are optional features of this Module. The HMD1M4Z1 have CAS-before-RAS refresh, RAS-only refresh and Hidden

refresh capabilities.

The HMD1M4Z1 is optimized for application to the systems, which are required high density and large capacity such as main

memory for main frames and mini computers, personal computer and high performance microprocessor systems.

The HMD1M4Z1 provides common data and outputs.

Features

PIN ASSIGNMENT

w Fast Page Mode operation

w CAS-before-RAS refresh capability

w RAS-only and Hidden refresh capability

w Fast parallel test mode capability

w TTL(5V) compatible inputs and outputs

w Early write or output enable controlled write

w Available in 20pin ZIP packages

w Single +5V± 10% power supply

w 1,024 Refresh Cycles/16ms

SYMBOL

/OE

/CAS

DQ2

DQ3

V_SS

DQ0

DQ1

/WE

/RAS

w Performance Range

Speed

t_RAC

t_CAC

t_RC

t_PC

HMD1M4Z1-5

HMD1M4Z1-6

110

PIN DESCRIPTION

V_CC

FUNCTION

Read/Write

Enable

Address Inputs

/WE

A0 – A9

DQ0 –

Data

Input/Output

Power

(+5V)

Vcc

DQ3

Row Address

Strobe

Vss

Ground

/RAS

/CAS

/OE

Column

Connection

Address Strobe

Data Output

Enable

URL:www.hbe.co.kr

REV.1.0(August.2002)

HANBit Electronics Co.,Ltd.

12 3 4 5 6

中文翻译

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