5秒后页面跳转
HMC7992LP3DE PDF预览

HMC7992LP3DE

更新时间: 2024-02-01 06:43:40
品牌 Logo 应用领域
亚德诺 - ADI 射频微波
页数 文件大小 规格书
14页 385K
描述
Nonreflective, Silicon SP4T Switch, 0.1 GHz to 6.0 GHz

HMC7992LP3DE 技术参数

是否无铅: 含铅是否Rohs认证: 符合
生命周期:Active包装说明:LCC16,.12SQ,20
针数:16Reach Compliance Code:compliant
风险等级:2.231dB压缩点:33 dBm
特性阻抗:50 Ω构造:COMPONENT
最大插入损耗:1.5 dB最小隔离度:25 dB
JESD-609代码:e4安装特点:SURFACE MOUNT
功能数量:1端子数量:16
准时:0.15 µs最大工作频率:6000 MHz
最小工作频率:100 MHz最高工作温度:105 °C
最低工作温度:-40 °C封装等效代码:LCC16,.12SQ,20
端口终止:ABSORPTIVE电源:3.3/5 V
射频/微波设备类型:SP4T最大压摆率:0.23 mA
表面贴装:YES端子面层:Nickel/Palladium/Gold (Ni/Pd/Au)
Base Number Matches:1

HMC7992LP3DE 数据手册

 浏览型号HMC7992LP3DE的Datasheet PDF文件第5页浏览型号HMC7992LP3DE的Datasheet PDF文件第6页浏览型号HMC7992LP3DE的Datasheet PDF文件第7页浏览型号HMC7992LP3DE的Datasheet PDF文件第9页浏览型号HMC7992LP3DE的Datasheet PDF文件第10页浏览型号HMC7992LP3DE的Datasheet PDF文件第11页 
Data Sheet  
HMC7992  
TYPICAL PERFORMANCE CHARACTERISTICS  
INSERTION LOSS, ISOLATION, AND RETURN LOSS  
0
0
–0.5  
–1.0  
–1.5  
–2.0  
–2.5  
–0.5  
–1.0  
–1.5  
–2.0  
+105°C  
+85°C  
+25°C  
–40°C  
+105°C  
+85°C  
+25°C  
–40°C  
–2.5  
0
1
2
3
4
5
6
7
8
0
1
2
3
4
5
6
7
8
FREQUENCY (GHz)  
FREQUENCY (GHz)  
Figure 7. Insertion Loss vs. Frequency for Various Temperatures, VDD = 5 V  
Figure 10. Insertion Loss vs. Frequency for Various Temperatures,  
VDD = 3.3 V  
0
0
–10  
–20  
–30  
–40  
–50  
–60  
–70  
–80  
–90  
–100  
RFC TO RF1  
RFC TO RF3  
RFC TO RF4  
RFC TO RF2  
RFC TO RF3  
–10  
RFC TO RF4  
–20  
–30  
–40  
–50  
–60  
–70  
–80  
–90  
–100  
0
1
2
3
4
5
6
0
1
2
3
4
5
6
FREQUENCY (GHz)  
FREQUENCY (GHz)  
Figure 8. Isolation vs. Frequency, VDD = 3.3 V to 5 V, RFC to RF1 = On  
Figure 11. Isolation vs. Frequency, VDD = 3.3 V to 5 V, RFC to RF2 = On  
0
0
RFC TO RF1  
RFC TO RF1  
RFC TO RF2  
RFC TO RF2  
–10  
–10  
RFC TO RF4  
RFC TO RF3  
–20  
–30  
–40  
–50  
–60  
–70  
–80  
–90  
–100  
–20  
–30  
–40  
–50  
–60  
–70  
–80  
–90  
–100  
0
1
2
3
4
5
6
0
1
2
3
4
5
6
FREQUENCY (GHz)  
FREQUENCY (GHz)  
Figure 9. Isolation vs. Frequency, VDD = 3.3 V to 5 V, RFC to RF3 = On  
Figure 12. Isolation vs. Frequency, VDD = 3.3 V to 5 V, RFC to RF4 = On  
Rev. 0 | Page 7 of 13  
 
 

与HMC7992LP3DE相关器件

型号 品牌 获取价格 描述 数据表
HMC7992LP3DETR ADI

获取价格

Nonreflective, Silicon SP4T Switch, 0.1 GHz to 6.0 GHz
HMC799LP3E HITTITE

获取价格

DC - 700 MHz, 10 kOhm TRANSIMPEDANCE AMPLIFIER
HMC799LP3E ADI

获取价格

DC - 700 MHz, 10 kOhm Transimpedance Amplifier SMT
HMC799LP3E_1 HITTITE

获取价格

DC - 700 MHz, 10 kOhm TRANSIMPEDANCE AMPLIFIER
HMC799LP3E_10 HITTITE

获取价格

DC - 700 MHz, 10 kOhm TRANSIMPEDANCE AMPLIFIER
HMC799LP3ETR ADI

获取价格

DC - 700 MHz, 10 kOhm Transimpedance Amplifier SMT
HMC800LP3E HITTITE

获取价格

10 dB GaAs MMIC 1-BIT DIGITAL POSITIVE CONTROL ATTENUATOR, DC - 10 GHz
HMC800LP3ETR HITTITE

获取价格

Variable Attenuator, GAAS
HMC801LP3E HITTITE

获取价格

15 dB GaAs MMIC 1-BIT DIGITAL POSITIVE CONTROL ATTENUATOR, DC - 10 GHz
HMC801LP3ETR ADI

获取价格

RF/MICROWAVE VARIABLE ATTENUATOR