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HMC7992LP3DE PDF预览

HMC7992LP3DE

更新时间: 2024-01-25 11:51:05
品牌 Logo 应用领域
亚德诺 - ADI 射频微波
页数 文件大小 规格书
14页 385K
描述
Nonreflective, Silicon SP4T Switch, 0.1 GHz to 6.0 GHz

HMC7992LP3DE 技术参数

是否无铅: 含铅是否Rohs认证: 符合
生命周期:Active包装说明:LCC16,.12SQ,20
针数:16Reach Compliance Code:compliant
风险等级:2.231dB压缩点:33 dBm
特性阻抗:50 Ω构造:COMPONENT
最大插入损耗:1.5 dB最小隔离度:25 dB
JESD-609代码:e4安装特点:SURFACE MOUNT
功能数量:1端子数量:16
准时:0.15 µs最大工作频率:6000 MHz
最小工作频率:100 MHz最高工作温度:105 °C
最低工作温度:-40 °C封装等效代码:LCC16,.12SQ,20
端口终止:ABSORPTIVE电源:3.3/5 V
射频/微波设备类型:SP4T最大压摆率:0.23 mA
表面贴装:YES端子面层:Nickel/Palladium/Gold (Ni/Pd/Au)
Base Number Matches:1

HMC7992LP3DE 数据手册

 浏览型号HMC7992LP3DE的Datasheet PDF文件第3页浏览型号HMC7992LP3DE的Datasheet PDF文件第4页浏览型号HMC7992LP3DE的Datasheet PDF文件第5页浏览型号HMC7992LP3DE的Datasheet PDF文件第7页浏览型号HMC7992LP3DE的Datasheet PDF文件第8页浏览型号HMC7992LP3DE的Datasheet PDF文件第9页 
Data Sheet  
HMC7992  
ABSOLUTE MAXIMUM RATINGS  
Table 4.  
36  
34  
32  
30  
28  
26  
24  
THROUGH AMR  
Parameter  
Rating  
Bias Voltage Range (VDD)  
Control Voltage Range (A, B)  
−0.3 V to +5.5 V  
−0.5 V to VDD + (+0.5 V)  
RF Input Power,1 3.3 V to 5 V (see  
Figure 2 and Figure 3)  
Through Path  
34 dBm  
Terminated Path  
28 dBm  
Hot Switching  
30 dBm  
TERMINATED AMR  
Channel Temperature  
Storage Temperature Range  
Maximum Peak Reflow Temperature  
(MSL3)  
135°C  
−65°C to +150°C  
260°C  
0.1  
1
10  
FREQUENCY (GHz)  
Thermal Resistance (Channel to  
Package Bottom)  
Through Path  
Terminated Path  
ESD Sensitivity  
Figure 2. Maximum RF Input Power vs. Frequency  
35  
33  
31  
29  
27  
25  
23  
21  
19  
115°C  
200°C  
THROUGH (AT 85°C)  
THROUGH (AT 105°C)  
Human Body Model (HBM)  
Charged Device Model (CDM)  
2 kV (Class 2)  
1.25 kV  
1 For recommended operating conditions, see Table 1.  
Stresses at or above those listed under Absolute Maximum  
Ratings may cause permanent damage to the product. This is a  
stress rating only; functional operation of the product at these  
or any other conditions above those indicated in the operational  
section of this specification is not implied. Operation beyond  
the maximum operating conditions for extended periods may  
affect product reliability.  
TERMINATED (AT 85°C)  
TERMINATED (AT 105°C)  
0.1  
1
10  
FREQUENCY (GHz)  
Figure 3. Power Derating vs. Frequency  
ESD CAUTION  
Rev. 0 | Page 5 of 13  
 
 
 
 

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