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HMC7992LP3DE PDF预览

HMC7992LP3DE

更新时间: 2024-01-04 11:33:50
品牌 Logo 应用领域
亚德诺 - ADI 射频微波
页数 文件大小 规格书
14页 385K
描述
Nonreflective, Silicon SP4T Switch, 0.1 GHz to 6.0 GHz

HMC7992LP3DE 技术参数

是否无铅: 含铅是否Rohs认证: 符合
生命周期:Active包装说明:LCC16,.12SQ,20
针数:16Reach Compliance Code:compliant
风险等级:2.231dB压缩点:33 dBm
特性阻抗:50 Ω构造:COMPONENT
最大插入损耗:1.5 dB最小隔离度:25 dB
JESD-609代码:e4安装特点:SURFACE MOUNT
功能数量:1端子数量:16
准时:0.15 µs最大工作频率:6000 MHz
最小工作频率:100 MHz最高工作温度:105 °C
最低工作温度:-40 °C封装等效代码:LCC16,.12SQ,20
端口终止:ABSORPTIVE电源:3.3/5 V
射频/微波设备类型:SP4T最大压摆率:0.23 mA
表面贴装:YES端子面层:Nickel/Palladium/Gold (Ni/Pd/Au)
Base Number Matches:1

HMC7992LP3DE 数据手册

 浏览型号HMC7992LP3DE的Datasheet PDF文件第1页浏览型号HMC7992LP3DE的Datasheet PDF文件第2页浏览型号HMC7992LP3DE的Datasheet PDF文件第3页浏览型号HMC7992LP3DE的Datasheet PDF文件第5页浏览型号HMC7992LP3DE的Datasheet PDF文件第6页浏览型号HMC7992LP3DE的Datasheet PDF文件第7页 
Data Sheet  
HMC7992  
SPECIFICATIONS  
VDD = 3.3 V to 5.0 V, VCTL = 0 V/VDD, TA = 25°C, 50 Ω system, unless otherwise noted.  
Table 1.  
Parameter  
Symbol  
Test Conditions/Comments  
0.1 GHz to 2.0 GHz  
2.0 GHz to 4.0 GHz  
Min Typ Max  
Unit  
dB  
dB  
INSERTION LOSS  
0.6  
0.7  
1.0  
0.9  
1.1  
1.5  
4.0 GHz to 6.0 GHz  
dB  
ISOLATION  
RFC to RF1to RF4 (Worst Case)  
0.1 GHz to 2.0 GHz  
2.0 GHz to 4.0 GHz  
4.0 GHz to 6.0 GHz  
40  
32  
25  
45  
37  
30  
dB  
dB  
dB  
RETURN LOSS  
On State  
0.1 GHz to 2.0 GHz  
2.0 GHz to 4.0 GHz  
4.0 GHz to 6.0 GHz  
0.1 GHz to 2.0 GHz  
0.4 GHz to 1.0 GHz  
1.0 GHz to 6.0 GHz  
25  
24  
17  
7
15  
20  
dB  
dB  
dB  
dB  
dB  
dB  
Off State  
SWITCHING SPEED  
Rise Time and Fall Time  
On Time and Off Time  
RADIO FREQUENCY (RF) SETTLING TIME  
INPUT POWER  
tRISE, tFALL  
tON, tOFF  
30  
150  
320  
ns  
ns  
ns  
10%/90% RFOUT  
50% VCTL to 0.1 dB margin of final RFOUT  
0.1 GHz to 6.0 GHz  
VDD = 5 V  
VDD = 3.3 V  
VDD = 5 V  
1 dB Compression  
P1dB  
P0.1dB  
IIP3  
35  
33  
33  
31  
dB  
dB  
dB  
dB  
0.1 dB Compression  
VDD = 3.3 V  
INPUT THIRD-ORDER INTERCEPT  
0.1 GHz to 6.0 GHz, two-tone input power =  
14 dBm/tone  
VDD = 5 V  
VDD = 3.3 V  
58  
56  
dBm  
dBm  
RECOMMENDED OPERATING CONDITIONS  
Bias Voltage Range  
Control Voltage Range  
Case Temperature Range  
Maximum RF Input Power  
Through Path  
VDD  
VCTL  
TCASE  
3.0  
0
−40  
5.4  
VDD  
+105 °C  
V
V
0.1 GHz to 6.0 GHz  
VDD/VCTL = 5 V, TCASE = 105°C  
VDD/VCTL = 5 V, TCASE = −40°C to +85°C  
VDD/VCTL = 3.3 V, TCASE = 105°C  
VDD/VCTL = 3.3 V, TCASE = −40°C to +85°C  
VDD/VCTL = 3.3 V to 5 V, TCASE = 105°C  
VDD/VCTL = 3.3 V to 5 V, TCASE = 85°C  
VDD/VCTL = 3.3 V to 5 V, TCASE = 25°C  
VDD/VCTL = 3.3 V to 5 V, TCASE = −40°C  
VDD/VCTL = 3.3 V to 5 V, TCASE = 105°C  
VDD/VCTL = 3.3 V to 5 V, TCASE = −40°C to +85°C  
30  
33  
29  
32  
21  
24  
27  
27  
24  
27  
dBm  
dBm  
dBm  
dBm  
dBm  
dBm  
dBm  
dBm  
dBm  
dBm  
Terminated Path  
Hot Switching  
Rev. 0 | Page 3 of 13  
 
 

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