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HMC532LP4ERTR PDF预览

HMC532LP4ERTR

更新时间: 2024-10-28 14:34:31
品牌 Logo 应用领域
亚德诺 - ADI 振荡器
页数 文件大小 规格书
6页 212K
描述
HMC532LP4ERTR

HMC532LP4ERTR 数据手册

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HMC532LP4 / 532LP4E  
v01.0508  
MMIC VCO w/ BUFFER  
AMPLIFIER, 7.1 - 7.9 GHz  
Typical Applications  
Features  
Low noise MMIC VCO w/Buffer Amplifier for:  
Pout: +14 dBm  
• VSAT Radio  
Phase Noise: -103 dBc/Hz @100 KHz  
No External Resonator Needed  
Single Supply: +3V @ 85 mA  
QFN Leadless SMT Package, 16 mm2  
• Point to Point/Multipoint Radio  
• Test Equipment & Industrial Controls  
• Military End-Use  
Functional Diagram  
General Description  
The HMC532LP4 & HMC532LP4E are GaAs InGaP  
Heterojunction Bipolar Transistor (HBT) MMIC VCOs  
with integrated resonators, negative resistance  
devices, varactor diodes, and buffer amplifiers.  
Covering 7.1 to 7.9 GHz, the VCO’s phase noise  
performance is excellent over temperature, shock  
and vibration due to the oscillator’s monolithic struc-  
ture. Power output is +14 dBm typical from a single  
supply of +3.0V @ 85 mA. The voltage controlled  
oscillator is packaged in a leadless QFN 4 x 4 mm  
surface mount package.  
11  
Electrical Specifications, TA = +25° C, Vcc = +3V  
Parameter  
Frequency Range  
Min.  
12  
Typ.  
7.1 - 7.9  
14  
Max.  
17  
Units  
GHz  
dBm  
dBc/Hz  
V
Power Output  
SSB Phase Noise @ 100 kHz Offset, Vtune= +5V @ RF Output  
Tune Voltage (Vtune)  
-101  
1
13  
100  
10  
Supply Current (Icc) (Vcc = +3.0V)  
Tune Port Leakage Current  
60  
85  
15  
mA  
μA  
Output Return Loss  
dB  
Harmonics  
2nd  
3rd  
-14  
-25  
dBc  
dBc  
Pulling (into a 2.0:1 VSWR)  
Pushing @ Vtune= +5V  
Frequency Drift Rate  
28  
78  
MHz pp  
MHz/V  
MHz/°C  
0.85  
For price, delivery, and to place orders, please contact Hittite Microwave Corporation:  
20 Alpha Road, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373  
Order On-line at www.hittite.com  
11 - 196  

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