HMC532LP4RTR

更新时间： 2024-01-13 18:58:21

品牌	Logo	应用领域
HITTITE		射频和微波射频放大器微波放大器缓冲放大器
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HMC532LP4RTR 数据手册

HMC532LP4 / 532LP4E

v00.0806

MMIC VCO w/ BUFFER

AMPLIFIER, 7.1 - 7.9 GHz

Typical Applications

Features

Low noise MMIC VCO w/Buffer Ampliﬁer for:

Pout: +14 dBm

• VSAT Radio

Phase Noise: -103 dBc/Hz @100 KHz

No External Resonator Needed

Single Supply: +3V @ 85 mA

QFN Leadless SMT Package, 16 mm²

• Point to Point/Multipoint Radio

• Test Equipment & Industrial Controls

• Military End-Use

Functional Diagram

General Description

The HMC532LP4 & HMC532LP4E are GaAs InGaP

Heterojunction Bipolar Transistor (HBT) MMIC VCOs

with integrated resonators, negative resistance

devices, varactor diodes, and buffer ampliﬁers.

Covering 7.1 to 7.9 GHz, the VCO’s phase noise

performance is excellent over temperature, shock

and vibration due to the oscillator’s monolithic struc-

ture. Power output is +14 dBm typical from a single

supply of +3.0V @ 85 mA. The voltage controlled

oscillator is packaged in a leadless QFN 4 x 4 mm

surface mount package.

Electrical Specifications, T_A= +25° C, Vcc = +3V

Parameter

Frequency Range

Min.

Typ.

7.1 - 7.9

Max.

Units

GHz

dBm

dBc/Hz

Power Output

SSB Phase Noise @ 100 kHz Offset, Vtune= +5V @ RF Output

Tune Voltage (Vtune)

-101

100

Supply Current (Icc) (Vcc = +3.0V)

Tune Port Leakage Current

μA

Output Return Loss

Harmonics

2nd

3rd

-14

-25

dBc

Pulling (into a 2.0:1 VSWR)

Pushing @ Vtune= +5V

Frequency Drift Rate

MHz pp

MHz/V

MHz/°C

0.85

For price, delivery, and to place orders, please contact Hittite Microwave Corporation:

20 Alpha Road, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373

Order On-line at www.hittite.com

10 - 180

12 3 4 5 6

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