Datasheet > HMC525A-Die

HMC525A-Die

更新时间： 2023-12-20 18:44:11

品牌	Logo	应用领域
亚德诺 - ADI		/
页数	文件大小	规格书
27页	574K
描述
4GHz至8.5 GHz宽带I/Q混频器

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HMC525A-Die 数据手册

4 GHz to 8.5 GHz,

Wideband I/Q Mixer

HMC525ACHIPS

Data Sheet

FEATURES

FUNCTIONAL BLOCK DIAGRAM

Passive: no dc bias required

HMC525ACHIPS

Conversion loss: 11 dB maximum (downconverter)

Input IP3: 17 dBm minimum (downconverter)

LO to RF Isolation: 43 dB minimum

IFx pad frequency range: dc to 3.5 GHz

12-pad, RoHS compliant, bare die (CHIP)

90° HYBRID

GND

IF1

IF2 GND

APPLICATIONS

Test and measurement instrumentation

Military, aerospace, and defense applications

Microwave point to point base stations

Figure 1.

GENERAL DESCRIPTION

The HMC525ACHIPS is a compact gallium arsenide (GaAs),

monolithic microwave integrated circuit (MMIC), in phase and

quadrature (I/Q), RoHS compliant mixer. The device can be

used as either an image reject mixer or a single sideband

upconverter. The mixer uses two standard double balanced

mixer cells and a 90° hybrid fabricated in a GaAs, metal

semiconductor field effect transistor (MESFET) process. The

HMC525ACHIPS is a much smaller alternative to a hybrid

style image reject mixer and a single sideband upconverter

assembly. The HMC525ACHIPS eliminates the need for wire

bonding, allowing the use of surface-mount manufacturing

techniques.

Rev. 0

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