HMC414MS8G

更新时间： 2024-01-12 00:17:51

品牌	Logo	应用领域
HITTITE		放大器射频微波功率放大器
页数	文件大小	规格书
8页	364K
描述
GaAs InGaP HBT MMIC POWER AMPLIFIER, 2.2 - 2.8 GHz

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HMC414MS8G 技术参数

是否无铅：	不含铅	是否Rohs认证：	符合
生命周期：	Transferred	包装说明：	ROHS COMPLIANT, PLASTIC, SMT, 8 PIN
Reach Compliance Code：	unknown	ECCN代码：	EAR99
风险等级：	5.08	Is Samacsys：	N
特性阻抗：	50 Ω	构造：	COMPONENT
增益：	17 dB	最大输入功率 (CW)：	17 dBm
JESD-609代码：	e3	最大工作频率：	2800 MHz
最小工作频率：	2200 MHz	最高工作温度：	85 °C
最低工作温度：	-40 °C	射频/微波设备类型：	NARROW BAND MEDIUM POWER
端子面层：	Matte Tin (Sn)	Base Number Matches：	1

HMC414MS8G

v02.1202

MICROWAVE CORPORATION

GaAs InGaP HBT MMIC

POWER AMPLIFIER, 2.2 - 2.8 GHz

Pin Descriptions

Pin Number

Function

Description

Interface Schematic

RF IN

This pin is AC coupled and matched to 50 Ohms from 2.2 to 2.8 GHz.

Not Connected.

3, 4

RF OUT

RF output and DC bias for the output stage.

Ground: Backside of package has exposed metal ground slug that must be

connected to ground thru a short path. Vias under the device are required.

GND

Power control pin. For maximum power, this pin should be connected to 3.6V.

For 5V operation, a dropping resistor is required. A higher voltage is not

recommended. For lower idle current, this voltage can be reduced.

6, 8

Vpd1, Vpd2

Power supply voltage for the ﬁrst ampliﬁer stage. An external bypass

capacitor of 330 pF is required as shown in the application schematic.

Vcc

For price, delivery, and to place orders, please contact Hittite Microwave Corporation:

12 Elizabeth Drive, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373

Order Online at www.hittite.com

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型号	品牌	描述	获取价格	数据表
HMC414MS8G_01	HITTITE	GaAs InGaP HBT MMIC POWER AMPLIFIER, 2.2 - 2.8 GHz	获取价格
HMC414MS8G_09	HITTITE	GaAs InGaP HBT MMIC POWER AMPLIFIER, 2.2 - 2.8 GHz	获取价格
HMC414MS8GE	HITTITE	GaAs InGaP HBT MMIC POWER AMPLIFIER, 2.2 - 2.8 GHz	获取价格
HMC414MS8GTR	HITTITE	暂无描述	获取价格
HMC415	ADI	InGaP HBT功率放大器SMT，4.9 - 5.9 GHz	获取价格
HMC415LP3	HITTITE	GaAs InGaP HBT MMIC POWER AMPLIFIER, 4.9 - 5.9 GHz	获取价格