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HMC413QS16GE PDF预览

HMC413QS16GE

更新时间: 2024-01-28 17:39:37
品牌 Logo 应用领域
亚德诺 - ADI 射频微波
页数 文件大小 规格书
9页 445K
描述
Power Amplifier SMT, 1.6 - 2.2 GHz

HMC413QS16GE 技术参数

是否无铅: 不含铅是否Rohs认证: 符合
生命周期:TransferredReach Compliance Code:compliant
ECCN代码:EAR99风险等级:5.25
特性阻抗:50 Ω构造:COMPONENT
增益:18 dB最大输入功率 (CW):15 dBm
JESD-609代码:e3最大工作频率:2200 MHz
最小工作频率:1600 MHz最高工作温度:85 °C
最低工作温度:-40 °C射频/微波设备类型:NARROW BAND MEDIUM POWER
端子面层:Matte Tin (Sn)

HMC413QS16GE 数据手册

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HMC413* PRODUCT PAGE QUICK LINKS  
Last Content Update: 11/29/2017  
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REFERENCE MATERIALS  
Product Selection Guide  
RF, Microwave, and Millimeter Wave IC Selection Guide  
2017  
EVALUATION KITS  
Quality Documentation  
HMC413QS16G Evaluation Board  
HMC Legacy PCN: QS##, QS##E and QS##G,QS##GE  
packages - Relocation of pre-existing production  
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DOCUMENTATION  
Application Notes  
Package/Assembly Qualification Test Report: Plastic  
Encapsulated QSOP (QTR: 02015 REV: 11)  
AN-1363: Meeting Biasing Requirements of Externally  
Biased RF/Microwave Amplifiers with Active Bias  
Controllers  
PCN: MS, QS, SOT, SOIC Packages - Sn/Pb Plating Vendor  
Change  
Broadband Biasing of Amplifiers General Application Note  
MMIC Amplifier Biasing Procedure Application Note  
Semiconductor Qualification Test Report: GaAs HBT-B  
(QTR: 2013-00229)  
Thermal Management for Surface Mount Components  
General Application Note  
DESIGN RESOURCES  
HMC413 Material Declaration  
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Data Sheet  
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