5秒后页面跳转
HMC404 PDF预览

HMC404

更新时间: 2023-12-20 18:45:02
品牌 Logo 应用领域
亚德诺 - ADI /
页数 文件大小 规格书
8页 356K
描述
GaAs MMIC次谐波IRM混频器芯片,26 - 33 GHz

HMC404 数据手册

 浏览型号HMC404的Datasheet PDF文件第2页浏览型号HMC404的Datasheet PDF文件第3页浏览型号HMC404的Datasheet PDF文件第4页浏览型号HMC404的Datasheet PDF文件第5页浏览型号HMC404的Datasheet PDF文件第6页浏览型号HMC404的Datasheet PDF文件第7页 
HMC404  
v03.0907  
GaAs MMIC SUB-HARMONICALLY  
PUMPED IRM MIXER, 26 - 33 GHz  
Mounting & Bonding Techniques for Millimeterwave GaAs MMICs  
The die should be attached directly to the ground plane eutectically or with  
0.102mm (0.004”) Thick GaAs MMIC  
conductive epoxy (see HMC general Handling, Mounting, Bonding Note).  
50 Ohm Microstrip transmission lines on 0.127mm (5 mil) thick alumina thin film  
substrates are recommended for bringing RF to and from the chip (Figure 1). If  
0.254mm (10 mil) thick alumina thin film substrates must be used, the die should  
be raised 0.150mm (6 mils) so that the surface of the die is coplanar with the  
surface of the substrate. One way to accomplish this is to attach the 0.102mm  
(4 mil) thick die to a 0.150mm (6 mil) thick molybdenum heat spreader (moly-tab)  
which is then attached to the ground plane (Figure 2).  
3 mil Ribbon Bond  
0.076mm  
(0.003”)  
3
RF Ground Plane  
Microstrip substrates should be brought as close to the die as possible in order  
to minimize ribbon bond length. Typical die-to-substrate spacing is 0.076mm (3  
mils). Gold ribbon of 0.075 mm (3 mil) width and minimal length <0.31 mm (<12  
mils) is recommended to minimize inductance on RF, LO & IF ports.  
0.127mm (0.005”) Thick Alumina  
Thin Film Substrate  
An RF bypass capacitor should be used on the Vdd input. A 100 pF single layer  
capacitor (mounted eutectically or by conductive epoxy) placed no further than  
0.762mm (30 Mils) from the chip is recommended.  
Figure 1.  
0.102mm (0.004”) Thick GaAs MMIC  
Handling Precautions  
Follow these precautions to avoid permanent damage.  
3 mil Ribbon Bond  
0.076mm  
(0.003”)  
Storage: All bare die are placed in either Waffle or Gel based ESD protective  
containers, and then sealed in an ESD protective bag for shipment. Once the  
sealed ESD protective bag has been opened, all die should be stored in a dry  
nitrogen environment.  
Cleanliness: Handle the chips in a clean environment. DO NOT attempt to clean  
the chip using liquid cleaning systems.  
RF Ground Plane  
Static Sensitivity: Follow ESD precautions to protect against ESD strikes.  
Transients: Suppress instrument and bias supply transients while bias is applied.  
Use shielded signal and bias cables to minimize inductive pick-up.  
General Handling: Handle the chip along the edges with a vacuum collet or with  
a sharp pair of bent tweezers. The surface of the chip has fragile air bridges and  
should not be touched with vacuum collet, tweezers, or fingers.  
0.150mm (0.005”) Thick  
Moly Tab  
0.254mm (0.010”) Thick Alumina  
Thin Film Substrate  
Figure 2.  
Mounting  
The chip is back-metallized and can be die mounted with AuSn eutectic preforms or with electrically conductive epoxy. The mounting  
surface should be clean and flat.  
Eutectic Die Attach: A 80/20 gold tin preform is recommended with a work surface temperature of 255 °C and a tool temperature  
of 265 °C. When hot 90/10 nitrogen/hydrogen gas is applied, tool tip temperature should be 290 °C. DO NOT expose the chip  
to a temperature greater than 320 °C for more than 20 seconds. No more than 3 seconds of scrubbing should be required for  
attachment.  
Epoxy Die Attach: Apply a minimum amount of epoxy to the mounting surface so that a thin epoxy fillet is observed around the  
perimeter of the chip once it is placed into position. Cure epoxy per the manufacturer’s schedule.  
Wire Bonding  
RF bonds made with 0.003” x 0.0005” ribbon are recommended. These bonds should be thermosonically bonded with a force of  
40-60 grams. DC bonds of 0.001” (0.025 mm) diameter, thermosonically bonded, are recommended. Ball bonds should be made  
with a force of 40-50 grams and wedge bonds at 18-22 grams. All bonds should be made with a nominal stage temperature of 150  
°C. A minimum amount of ultrasonic energy should be applied to achieve reliable bonds. All bonds should be as short as possible,  
less than 12 mils (0.31 mm).  
Information furnished by Analog Devices is believed to be accurate and reliable. However, no  
For price, delivery, and to place orders: Analog Devices, Inc.,  
responsibility is assumedbyAnalogDevicesforitsuse,nor for anyinfringementsofpatentsor otherOneTechnologyWay,P.O.Box 9106, Norwood,MA 02062-9106  
rights of third parties that may result from its use. Specifications subject to change without notice. No  
Phone: 781-329-4700Order onlineatwww.analog.com  
license is granted by implication or otherwise under any patent or patent rights of Analog Devices.  
Trademarks and registered trademarks are the property of their respectiveowners.
3 - 65  
Application Support: Phone: 1-800-ANALOG-D  

与HMC404相关器件

型号 品牌 描述 获取价格 数据表
HMC404_08 HITTITE GaAs MMIC SUB-HARMONICALLY PUMPED IRM MIXER, 26 - 33 GHz

获取价格

HMC405 HITTITE InGaP HBT GAIN BLOCK MMIC AMPLIFIER, DC - 10.0 GHz

获取价格

HMC405_07 HITTITE InGaP HBT GAIN BLOCK MMIC AMPLIFIER, DC - 10 GHz

获取价格

HMC405_09 HITTITE InGaP HBT GAIN BLOCK MMIC AMPLIFIER, DC - 10 GHz

获取价格

HMC405-Die ADI InGaP HBT增益模块放大器芯片,DC - 10 GHz

获取价格

HMC406 ADI InGaP HBT功率放大器SMT,5 - 6 GHz

获取价格