Datasheet > HM62V8100LTTI-7

HM62V8100LTTI-7

更新时间： 2024-02-21 12:28:06

品牌	Logo	应用领域
日立 - HITACHI		静态存储器光电二极管内存集成电路
页数	文件大小	规格书
19页	89K
描述
Standard SRAM, 1MX8, 70ns, CMOS, PDSO44, 0.400 INCH, PLASTIC, TSOP2-44

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HM62V8100LTTI-7 技术参数

HM62V8100I Series

Wide Temperature Range Version

8 M SRAM (1024-kword × 8-bit)

ADE-203-1278 (Z)

Preliminary

Rev. 0.0

Jun. 6, 2001

Description

The Hitachi HM62V8100I Series is 8-Mbit static RAM organized 1,048,576-word × 8-bit. HM62V8100I

Series has realized higher density, higher performance and low power consumption by employing Hi-CMOS

process technology. It offers low power standby power dissipation; therefore, it is suitable for battery backup

systems. It is packaged in 48 bumps chip size package with 0.75 mm bump pitch or standard 44-pin TSOP II

for high density surface mounting.

Features

•

Single 3.0 V supply: 2.7 V to 3.6 V

Fast access time: 55/70 ns (Max)

Power dissipation:

Active: 6.0 mW/MHz (Typ)

Standby: 4.5 µW (Typ)

•

Completely static memory.

No clock or timing strobe required

Equal access and cycle times

Common data input and output.

Three state output

•

Battery backup operation.

2 chip selection for battery backup

Temperature range: –40 to +85°C

Preliminary: The specification of this device are subject to change without notice. Please contact your

nearest Hitachi’s Sales Dept. regarding specification.

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