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HM62V8128BLR-12SL PDF预览

HM62V8128BLR-12SL

更新时间: 2024-02-02 22:44:46
品牌 Logo 应用领域
日立 - HITACHI 静态存储器光电二极管内存集成电路
页数 文件大小 规格书
18页 101K
描述
Standard SRAM, 128KX8, 120ns, CMOS, PDSO32, 8 X 20 MM, REVERSE, TSOP-32

HM62V8128BLR-12SL 技术参数

是否Rohs认证:不符合生命周期:Obsolete
零件包装代码:TSOP包装说明:TSOP1-R, TSSOP32,.8,20
针数:32Reach Compliance Code:unknown
ECCN代码:EAR99HTS代码:8542.32.00.41
风险等级:5.77Is Samacsys:N
最长访问时间:120 ns其他特性:BATTERY BACK-UP OPERATION
I/O 类型:COMMONJESD-30 代码:R-PDSO-G32
JESD-609代码:e0长度:18.4 mm
内存密度:1048576 bit内存集成电路类型:STANDARD SRAM
内存宽度:8功能数量:1
端子数量:32字数:131072 words
字数代码:128000工作模式:ASYNCHRONOUS
最高工作温度:70 °C最低工作温度:
组织:128KX8输出特性:3-STATE
封装主体材料:PLASTIC/EPOXY封装代码:TSOP1-R
封装等效代码:TSSOP32,.8,20封装形状:RECTANGULAR
封装形式:SMALL OUTLINE, THIN PROFILE并行/串行:PARALLEL
峰值回流温度(摄氏度):NOT SPECIFIED电源:3 V
认证状态:Not Qualified反向引出线:YES
座面最大高度:1.2 mm最大待机电流:0.000015 A
最小待机电流:2 V子类别:SRAMs
最大压摆率:0.025 mA最大供电电压 (Vsup):3.6 V
最小供电电压 (Vsup):2.7 V标称供电电压 (Vsup):3 V
表面贴装:YES技术:CMOS
温度等级:COMMERCIAL端子面层:Tin/Lead (Sn/Pb)
端子形式:GULL WING端子节距:0.5 mm
端子位置:DUAL处于峰值回流温度下的最长时间:NOT SPECIFIED
宽度:8 mmBase Number Matches:1

HM62V8128BLR-12SL 数据手册

 浏览型号HM62V8128BLR-12SL的Datasheet PDF文件第2页浏览型号HM62V8128BLR-12SL的Datasheet PDF文件第3页浏览型号HM62V8128BLR-12SL的Datasheet PDF文件第4页浏览型号HM62V8128BLR-12SL的Datasheet PDF文件第5页浏览型号HM62V8128BLR-12SL的Datasheet PDF文件第6页浏览型号HM62V8128BLR-12SL的Datasheet PDF文件第7页 
HM62V8128B Series  
131,072-word × 8-bit High Speed CMOS Static RAM  
ADE-203-657B (Z)  
Rev. 2.0  
Jan. 16, 1997  
Description  
The Hitachi HM62V8128B is a CMOS static RAM organized 131,072-word × 8-bit. It  
realizes higher density, higher performance and low power consumption by employing 0.8  
µm Hi-CMOS shrink process technology. It offers low power standby power dissipation;  
therefore, it is suitable for battery backup systems. The device, packaged in a 525-mil SOP  
(460-mil body SOP) or a 8 mm × 20 mm TSOP with thickness of 1.2 mm, is available for  
high density mounting. TSOP package is suitable for cards, and reverse type TSOP is also  
provided.  
Features  
Single 3 V supply  
Fast access time: 120/150 ns (max)  
Power dissipation:  
Active: 18 mW/MHz (typ)  
Standby: 3 µW (typ)  
Completely static memory. No clock or timing strobe required  
Equal access and cycle times  
Common data input and output. Three state output  
Directry CMOS compatible all inputs and outputs.  
Capability of battery backup operation. 2 chip selection for battery backup  

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