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HM624100HCJP-10

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HM624100HCJP-10 数据手册

HM624100HC Series

4M High Speed SRAM (1-Mword × 4-bit)

ADE-203-1198 (Z)

Preliminary

Rev. 0.0

Nov. 30, 2000

Description

The HM624100HC is a 4-Mbit high speed static RAM organized 1-Mword × 4-bit. It has realized high speed

access time by employing CMOS process (6-transistor memory cell) and high speed circuit designing

technology. It is most appropriate for the application which requires high speed and high density memory,

such as cache and buffer memory in system. The HM624100HC is packaged in 400-mil 32-pin SOJ for high

density surface mounting.

Features

•

Single 5.0 V supply : 5.0 V ± 10 %

Access time 10 ns (max)

Completely static memory

No clock or timing strobe required

Equal access and cycle times

Directly TTL compatible

•

All inputs and outputs

•

Operating current : 140 mA (max)

TTL standby current : 40 mA (max)

CMOS standby ccurrent : 5 mA (max)

: 1.2 mA (max) (L-version)

•

Data retension current : 0.8 mA (max) (L-version)

Data retension voltage : 2.0 V (min) (L-version)

Center V_CCand V_SStype pinout

Preliminary: The specification of this device are subject to change without notice. Please contact your nearest

Hitachi’s Sales Dept. regarding specification.

12 3 4 5 6 7...14

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型号	品牌	获取价格	描述	数据表
HM624100HCJP-12	ETC	获取价格	SRAM: Notes on Usage Technical Update/Device
HM624100HCLJP-10	HITACHI	获取价格	4M High Speed SRAM (1-Mword x 4-bit)
HM624100HCLJP-12	ETC	获取价格	SRAM: Notes on Usage Technical Update/Device
HM624100HJP-10	HITACHI	获取价格	4M High Speed SRAM (1-Mword x 4-bit)
HM624100HJP-12	HITACHI	获取价格	4M High Speed SRAM (1-Mword x 4-bit)
HM624100HJP-15	HITACHI	获取价格	4M High Speed SRAM (1-Mword x 4-bit)
HM624100HLJP-10	HITACHI	获取价格	4M High Speed SRAM (1-Mword x 4-bit)
HM624100HLJP-12	HITACHI	获取价格	4M High Speed SRAM (1-Mword x 4-bit)
HM624100HLJP-15	HITACHI	获取价格	4M High Speed SRAM (1-Mword x 4-bit)
HM624100JLP-30	ETC	获取价格	x4 SRAM