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HM5117400BLTS-6 PDF预览

HM5117400BLTS-6

更新时间: 2024-11-12 03:53:15
品牌 Logo 应用领域
日立 - HITACHI 存储内存集成电路光电二极管动态存储器
页数 文件大小 规格书
25页 256K
描述
4194304-WORD X 4-BIT DYNAMIC RANDOM ACCESS MEMORY

HM5117400BLTS-6 数据手册

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HM5117400B Series  
4,194,304-word 4-bit Dynamic Random Access Memory  
ADE-203-369A (Z)  
Rev. 1.0  
Nov. 15, 1995  
Description  
The Hitachi HM5117400B is a CMOS dynamic RAM organized 4,194,304 word 4 bit. It employs the most  
advanced CMOS technology for high performance and low power. The HM5117400B offers Fast Page Mode  
as a high speed access mode.  
Features  
Single 5 V ( 10%)  
High speed  
Access time : 60 ns/ 70 ns/ 80 ns (max)  
Low power dissipation  
Active mode : 605 mW/550 mW/495 mW(max)  
Standby mode : 11 mW (max)  
: 0.83 mW (max) (L-version)  
Fast page mode capability  
Long refresh period  
2048 refresh cycles : 32 ms  
: 128 ms (L-version)  
3 variations of refresh  
-only refresh  
-before-  
refresh  
Hidden refresh  
Battery backup operation (L-version)  
Test function  
16-bit parallel test mode  
This specification is fully compatible with the 16-Mbit DRAM specifications from TEXAS INSTRUMENTS.  

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