Datasheet > HM4033

HM4033

更新时间： 2024-11-11 14:55:55

品牌	Logo	应用领域
江苏长电/长晶 - CJ		/
页数	文件大小	规格书
3页	1511K
描述
SOT-89-3L

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中文翻译

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数据手册

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HM4033 数据手册

JIANGSU CHANGJING ELECTRONICS TECHNOLOGY CO., LTD

SOT-89-3L Plastic-Encapsulate Transistors

SOT-89-3L

HM4033

TRANSISTOR (PNP)

1. BASE

FEATURES

2. COLLECTOR

High Current

General Purpose Amplifier Applications

3. EMITTER

MARKING:H4033

H4033

Solid dot = Green molding compound device.

MAXIMUM RATINGS (Ta=25℃ unless otherwise noted)

Symbol

V_CBO

V_CEO

V_EBO

I_C

Parameter

Collector-Base Voltage

Value

-80

Unit

Collector-Emitter Voltage

-80

Emitter-Base Voltage

-5

Collector Current

-1

P_C

Collector Power Dissipation

500

℃/W

℃

R_θJA

T_J,T_stg

Thermal Resistance From Junction To Ambient

Operation Junction and Storage Temperature Range

250

-55~+150

ELECTRICAL CHARACTERISTICS (T_a=25℃ unless otherwise specified)

Parameter

Symbol

Test conditions

Min

-80

-5

Typ

Max

Unit

Collector-base breakdown voltage

Collector-emitter breakdown voltage

Emitter-base breakdown voltage

Collector cut-off current

V_(BR)CBOI_C=-10µA,I_E=0

V_(BR)CEOI_C=-10mA,I_B=0

V_(BR)EBOI_E=-10µA,I_C=0

I_CBO

I_EBO

V_CB=-60V,I_E=0

-100

Emitter cut-off current

V_EB=-5V,I_C=0

h_FE(1)

h_FE(2)

h_FE(3)

h_FE(4)

V_CE=-5V, I_C=-0.1mA

V_CE=-5V, I_C=-100mA

V_CE=-5V, I_C=-500mA

V_CE=-5V, I_C=-1A

100

DC current gain

I_C=-150mA,I_B=-15mA

I_C=-500mA,I_B=-50mA

I_C=-150mA,I_B=-15mA

I_C=-500mA,I_B=-50mA

V^CE=-10V,I^C=-50mA, f=100MHz

V_CB=-10V, I_E=0, f=1MHz

-0.15

-0.5

-0.9

-1.1

Collector-emitter saturation voltage

V_CE(sat)

Base-emitter saturation voltage

Transition frequency

V_BE(sat)

f_T

100

MHz

Collector output capacitance

C_ob

*Pulse test

www.jscj-elec.com

Rev. - 2.2

12 3

中文翻译

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