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HM4033-TP PDF预览

HM4033-TP

更新时间: 2024-11-10 13:00:59
品牌 Logo 应用领域
美微科 - MCC 晶体晶体管
页数 文件大小 规格书
2页 215K
描述
Small Signal Bipolar Transistor, 1A I(C), 80V V(BR)CEO, 1-Element, PNP, Silicon, ROHS COMPLIANT, PLASTIC, PACKAGE-3

HM4033-TP 技术参数

是否无铅:不含铅是否Rohs认证:符合
生命周期:Obsolete包装说明:SMALL OUTLINE, R-PSSO-F3
针数:3Reach Compliance Code:compliant
ECCN代码:EAR99风险等级:5.78
Is Samacsys:N外壳连接:COLLECTOR
最大集电极电流 (IC):1 A集电极-发射极最大电压:80 V
配置:SINGLE最小直流电流增益 (hFE):25
JESD-30 代码:R-PSSO-F3JESD-609代码:e3
湿度敏感等级:1元件数量:1
端子数量:3最高工作温度:150 °C
封装主体材料:PLASTIC/EPOXY封装形状:RECTANGULAR
封装形式:SMALL OUTLINE峰值回流温度(摄氏度):260
极性/信道类型:PNP认证状态:Not Qualified
表面贴装:YES端子面层:Matte Tin (Sn)
端子形式:FLAT端子位置:SINGLE
处于峰值回流温度下的最长时间:10晶体管应用:AMPLIFIER
晶体管元件材料:SILICON标称过渡频率 (fT):100 MHz
Base Number Matches:1

HM4033-TP 数据手册

 浏览型号HM4033-TP的Datasheet PDF文件第2页 
M C C  
TM  
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20736 Marilla Street Chatsworth  
ꢆꢋꢅꢌꢍꢎꢍꢍ  
ꢏꢐꢄꢑꢈꢒꢅꢓꢔꢍꢔ ꢅ!ꢕꢍ"#ꢌꢎꢎ  
$ꢉ%ꢒꢅ   ꢓꢔꢍꢔ ꢅ!ꢕꢍ"#ꢌꢎꢌ  
Micro Commercial Components  
HM4033  
Features  
x
x
·
High current for general purpose amplifier application  
PNP Plastic  
Encapsulate  
Transistor  
SOT-89 package for surface mount application  
Lead Free Finish/RoHS Compliant ("P" Suffix designates  
RoHS Compliant. See ordering information)  
Epoxy meets UL 94 V-0 flammability rating  
Moisure Sensitivity Level 1  
·
·
Mechanical Data  
SOT-89  
x
Marking:H4033  
A
B
Maximum Ratings@ Ta=25OC Unless Otherwise Specified  
K
Symbol  
VCEO  
VCBO  
VEBO  
IC  
Parameter  
Collector-Emitter Voltage  
Collector-Base Voltage  
Emitter-Base Voltage  
Collector Current  
Collector Power Dissipation  
Junction Temperature  
Storage Temperature  
Rating  
Unit  
V
-80  
-80  
-5  
-1  
0.5  
V
V
A
W
OC  
OC  
E
C
Pc  
TJ  
TSTG  
-55 to +150  
-55 to +150  
D
G
H
J
Electrical Characteristics @ Ta=25OC Unless Otherwise Specified  
F
Symbol  
ICBO  
Parameter  
Collector Cutoff Current  
(VCB=-60Vdc,IE=0)  
Min  
Typ  
Max  
-100  
Units  
nA  
C
C
IEBO  
Emitter Cutoff Current  
(VEB=-5.0Vdc, IC=0)  
-100  
nA  
B
E
V(BR)CBO  
V(BR)CEO  
V(BR) EBO  
Collector-Base Breakdown Voltage  
-80  
-80  
-5  
V
V
V
(Ic=-10uA, IE=0)  
Collector-Emitter Breakdown Voltage  
(Ic=-10mA, IB=0)  
Emitter-Base Breakdown Voltage  
(IE=-10uA, IC=0)  
ꢈꢁꢇꢅꢂꢆꢁꢂꢆꢀ  
hFE1  
hFE2  
hFE3  
VCE=-5V, IC=-0.1mA  
75  
ꢈꢁꢇꢀ  
ꢁꢂꢃꢄꢅꢆꢀ  
ꢇꢇꢀ  
ꢂꢋꢌꢅꢆꢀ  
V
V
CE=-5V, IC=-100mA  
CE=-5V, IC=-500mA  
100  
70  
ꢇꢁꢂꢀ  
ꢇꢉꢊꢀ  
ꢍꢎꢑꢎꢀ  
ꢚꢚꢚꢚꢚ  
ꢇꢁꢂꢀ  
ꢒꢍꢐꢓꢀ  
1.55  
ꢇꢉꢊꢀ  
ꢒꢍꢔꢕꢀ  
ꢚꢚꢚꢚꢚ  
ꢉꢀ  
ꢍꢎꢏꢐꢀ  
.061  
REF.  
hFE4  
VCE=-5V, IC=-1000mA  
25  
ꢃꢀ  
ꢈꢀ  
ꢅꢀ  
ꢙꢀ  
ꢝꢀ  
ꢄꢀ  
ꢞꢀ  
ꢍꢎꢗꢒꢀ  
ꢍꢕꢐꢎꢀ  
ꢍꢕꢓꢘꢀ  
ꢍꢎꢎꢑꢀ  
ꢍꢕꢎꢐꢀ  
ꢍꢕꢎꢗꢀ  
ꢍꢕꢎꢗꢀ  
ꢍꢕꢗꢗꢀ  
ꢍꢎꢔꢗꢀ  
ꢍꢕꢐꢓꢀ  
ꢍꢎꢕꢕꢀ  
ꢚꢚꢚꢚꢚꢀ  
ꢐꢍꢓꢎꢀ  
ꢕꢍꢑꢕꢀ  
ꢘꢍꢐꢒꢀ  
ꢐꢍꢕꢕꢀ  
ꢕꢍꢐꢐꢀ  
ꢕꢍꢐꢑꢀ  
ꢕꢍꢐꢑꢀ  
ꢎꢍꢒꢕꢀ  
ꢒꢍꢎꢓꢀ  
ꢎꢍꢕꢕꢀ  
ꢘꢍꢗꢒꢀ  
ꢚꢚꢚꢚꢚꢀ  
VCE(SAT)1  
VCE(SAT)1  
VBE(SAT)1  
VBE(SAT)1  
fT  
IC=-150mA, IB=-15mA  
-0.15  
-0.5  
-0.9  
-1.1  
V
V
V
V
IC=-500mA, IB=-50mA  
ꢌꢛꢜꢀ  
IC=-150mA, IB=-15mA  
ꢍꢕꢎꢓꢀ  
ꢍꢕꢘꢎꢀ  
ꢍꢕꢎꢔꢀ  
ꢍꢕꢔꢐꢀ  
ꢕꢍꢒꢑꢀ  
ꢕꢍꢗꢐꢀ  
ꢕꢍꢒꢎꢀ  
ꢎꢍꢔꢕꢀ  
IC=-500mA, IB=-50mA  
Transition Frequency  
100  
MHZ  
(VCE=-10V, IC=50mA, f=100MHZ)  
Collector Output Capacitance  
(VCB=-10V, IE=0, f=1MHZ)  
 ꢀ  
Cob  
20  
pF  
www.mccsemi.com  
1 of 2  
Revision: A  
2011/01/01  

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