Datasheet > HM4033

HM4033

更新时间： 2024-11-10 10:52:47

品牌	Logo	应用领域
金誉半导体 - HTSEMI		晶体晶体管
页数	文件大小	规格书
1页	253K
描述
TRANSISTOR (PNP)

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中文翻译

获取价格

数据手册

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HM4033 数据手册

HM4033

TRANSISTOR (PNP)

SOT-89-3L

FEATURES

1. BASE

High Current

General Purpose Amplifier Applications

2. COLLECTOR

3. EMITTER

MARKING:H4033

MAXIMUM RATINGS (T_a=25℃ unless otherwise noted)

Symbol

V_CBO

V_CEO

V_EBO

I_C

Parameter

Collector-Base Voltage

Value

-80

Unit

Collector-Emitter Voltage

Emitter-Base Voltage

-80

-5

Collector Current

-1

P_C

Collector Power Dissipation

Thermal Resistance From Junction To Ambient

Junction Temperature

500

℃/W

℃

R_θJA

T_j

250

150

T_stg

Storage Temperature

-55~+150

℃

ELECTRICAL CHARACTERISTICS (T_a=25℃ unless otherwise specified)

Parameter

Symbol

Test

conditions

Min

-80

-5

Typ

Max

Unit

Collector-base breakdown voltage

Collector-emitter breakdown voltage

Emitter-base breakdown voltage

Collector cut-off current

V_(BR)CBOI_C=-10µA,I_E=0

V_(BR)CEOI_C=-10mA,I_B=0

V_(BR)EBOI_E=-10µA,I_C=0

I_CBO

I_EBO

V_CB=-60V,I_E=0

-100

Emitter cut-off current

V_EB=-5V,I_C=0

h_FE(1)

h_FE(2)

h_FE(3)

h_FE(4)

V_CE=-5V, I_C=-0.1mA

V_CE=-5V, I_C=-100mA

V_CE=-5V, I_C=-500mA

V_CE=-5V, I_C=-1A

100

DC current gain

I_C=-150mA,I_B=-15mA

I_C=-500mA,I_B=-50mA

I_C=-150mA,I_B=-15mA

I_C=-500mA,I_B=-50mA

V^CE=-10V,I^C=-50mA, f=100MHz

V_CB=-10V, I_E=0, f=1MHz

-0.15

-0.5

-0.9

-1.1

Collector-emitter saturation voltage

V_CE(sat)

Base-emitter saturation voltage

Transition frequency

V_BE(sat)

f_T

100

MHz

Collector output capacitance

C_ob

*Pulse test

JinYu

semiconductor

www.htsemi.com

Date:2011/05

中文翻译

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