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HM3E-65764N-5+ PDF预览

HM3E-65764N-5+

更新时间: 2024-09-21 19:08:51
品牌 Logo 应用领域
TEMIC 静态存储器光电二极管内存集成电路
页数 文件大小 规格书
14页 718K
描述
Standard SRAM, 8KX8, 55ns, CMOS, PDIP28,

HM3E-65764N-5+ 技术参数

是否Rohs认证: 不符合生命周期:Obsolete
Reach Compliance Code:unknown风险等级:5.79
最长访问时间:55 nsI/O 类型:COMMON
JESD-30 代码:R-PDIP-T28JESD-609代码:e0
内存密度:65536 bit内存集成电路类型:STANDARD SRAM
内存宽度:8端子数量:28
字数:8192 words字数代码:8000
工作模式:ASYNCHRONOUS最高工作温度:70 °C
最低工作温度:组织:8KX8
输出特性:3-STATE封装主体材料:PLASTIC/EPOXY
封装代码:DIP封装等效代码:DIP28,.6
封装形状:RECTANGULAR封装形式:IN-LINE
并行/串行:PARALLEL电源:5 V
最大待机电流:0.02 A最小待机电流:4.5 V
子类别:SRAMs最大压摆率:0.08 mA
标称供电电压 (Vsup):5 V表面贴装:NO
技术:CMOS温度等级:COMMERCIAL
端子面层:Tin/Lead (Sn/Pb)端子形式:THROUGH-HOLE
端子节距:2.54 mm端子位置:DUAL
Base Number Matches:1

HM3E-65764N-5+ 数据手册

 浏览型号HM3E-65764N-5+的Datasheet PDF文件第2页浏览型号HM3E-65764N-5+的Datasheet PDF文件第3页浏览型号HM3E-65764N-5+的Datasheet PDF文件第4页浏览型号HM3E-65764N-5+的Datasheet PDF文件第5页浏览型号HM3E-65764N-5+的Datasheet PDF文件第6页浏览型号HM3E-65764N-5+的Datasheet PDF文件第7页 

与HM3E-65764N-5+相关器件

型号 品牌 获取价格 描述 数据表
HM3E-65764N-9 ETC

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x8 SRAM
HM3E-65764N-9+ TEMIC

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Standard SRAM, 8KX8, 55ns, CMOS, PDIP28,
HM4001E FOXCONN

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Rectangular Power Connector, 2 Contact(s), Male, Solder Terminal, Plug, ROHS COMPLIANT
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HM4002V FOXCONN

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Rectangular Power Connector, 4 Contact(s), Male, Solder Terminal, Plug, ROHS COMPLIANT
HM4003V FOXCONN

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Rectangular Power Connector, 6 Contact(s), Male, Solder Terminal, Plug, ROHS COMPLIANT
HM4004E FOXCONN

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Rectangular Power Connector, 8 Contact(s), Male, Solder Terminal, Plug, ROHS COMPLIANT
HM4004V FOXCONN

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Rectangular Power Connector, 8 Contact(s), Male, Solder Terminal, Plug, ROHS COMPLIANT
HM4005E FOXCONN

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Rectangular Power Connector, 10 Contact(s), Male, Solder Terminal, Plug, ROHS COMPLIANT