是否Rohs认证: | 符合 | 生命周期: | Active |
包装说明: | SMALL OUTLINE, R-PSSO-G2 | Reach Compliance Code: | compliant |
风险等级: | 5.66 | 最大集电极电流 (IC): | 8 A |
集电极-发射极最大电压: | 80 V | 配置: | SINGLE |
最小直流电流增益 (hFE): | 40 | JEDEC-95代码: | TO-252 |
JESD-30 代码: | R-PSSO-G2 | 元件数量: | 1 |
端子数量: | 2 | 最高工作温度: | 150 °C |
封装主体材料: | PLASTIC/EPOXY | 封装形状: | RECTANGULAR |
封装形式: | SMALL OUTLINE | 峰值回流温度(摄氏度): | NOT SPECIFIED |
极性/信道类型: | NPN | 表面贴装: | YES |
端子形式: | GULL WING | 端子位置: | SINGLE |
处于峰值回流温度下的最长时间: | NOT SPECIFIED | 晶体管应用: | SWITCHING |
晶体管元件材料: | SILICON | 标称过渡频率 (fT): | 50 MHz |
Base Number Matches: | 1 |
型号 | 品牌 | 获取价格 | 描述 | 数据表 |
HJ44H11-TA3-T | UTC |
获取价格 |
Power Bipolar Transistor, 8A I(C), 80V V(BR)CEO, 1-Element, NPN, Silicon, TO-220AB, Plasti | |
HJ44H11-TN3-R | UTC |
获取价格 |
Power Bipolar Transistor, 8A I(C), 80V V(BR)CEO, 1-Element, NPN, Silicon, TO-252, Plastic/ | |
HJ45H11 | HSMC |
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PNP EPITAXIAL PLANAR TRANSISTOR | |
HJ45H11 | UTC |
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PNP | |
HJ45H11G-TN3-R | UTC |
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Power Field-Effect Transistor, | |
HJ47 | HSMC |
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NPN EPITAXIAL PLANAR TRANSISTOR | |
HJ-48001 | CRANE |
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10 MHz - 500 MHz RF/MICROWAVE SPLITTER, 2 dB INSERTION LOSS | |
HJ4-AC100V-6 | PANASONIC |
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Power/Signal Relay, 4PDT, Momentary, 1500mW (Coil), 5A (Contact), 125VDC (Contact), AC Inp | |
HJ4-AC100V-R | PANASONIC |
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Power/Signal Relay, 4PDT, Momentary, 1500mW (Coil), 5A (Contact), 125VDC (Contact), AC Inp | |
HJ4-AC200V-R-6 | PANASONIC |
获取价格 |
Power/Signal Relay, 4PDT, Momentary, 1500mW (Coil), 5A (Contact), 125VDC (Contact), AC Inp |