Datasheet > HJ45H11

HJ45H11

更新时间： 2024-10-31 22:18:11

品牌	Logo	应用领域
HSMC		晶体晶体管局域网
页数	文件大小	规格书
2页	26K
描述
PNP EPITAXIAL PLANAR TRANSISTOR

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中文翻译

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技术参数
数据手册

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HJ45H11 技术参数

生命周期：	Obsolete	包装说明：	,
Reach Compliance Code：	unknown	风险等级：	5.6
Is Samacsys：	N	最大集电极电流 (IC)：	10 A
配置：	Single	最小直流电流增益 (hFE)：	40
最高工作温度：	150 °C	极性/信道类型：	PNP
最大功率耗散 (Abs)：	20 W	子类别：	Other Transistors
表面贴装：	YES	Base Number Matches：	1

HJ45H11 数据手册

Spec. No. : HE6006-B

Issued Date : 1994.11.09

Revised Date : 2000.11.01

Page No. : 1/2

HI-SINCERITY

MICROELECTRONICS CORP.

HJ45H11

PNP EPITAXIAL PLANAR TRANSISTOR

Description

The HJ45H11 is designed for various specific and general purpose

applications, such as: output and driver stages of amplifiers operat-

ing at frequencies from DC to greater than 1MHz;series, shunt and

switching regulators; low and high frequency inverters/converters;

and many others.

(Ta=25°C)

Absolute Maximum Ratings

• Maximum Temperatures

Storage Temperature............................................................................................ -55 ~ +150 °C

Junction Temperature .................................................................................................... +150 °C

• Maximum Power Dissipation

Total Power Dissipation (Tc=25°C) .................................................................................... 20 W

• Maximum Voltages and Currents

BVCEO Collector to Base Voltage..................................................................................... -80 V

BVCES Collector to Emitter Voltage .................................................................................. -80 V

BVEBO Emitter to Base Voltage.......................................................................................... -5 V

IC Collector Current .......................................................................................................... -10 A

IB Base Current ................................................................................................................... -5 A

(Ta=25°C)

Characteristics

Symbol

Min.

Typ.

Max.

Unit

Test Conditions

IC=-30mA, IB=0

IC=-1mA, IB=0

IE=-1mA, IC=0

VCB=-80V, IE=0

VEB=-5V, IC=0

IC=-8A, IB=-0.8A

VCE=-1V, IC=-2A

VCE=-1V, IC=-4A

VCB=-10V,

BVCEO

BVCES

BVEBO

ICBO

-80

-5

-10

-50

-1

-1.5

IEBO

*VCE(sat)

*VBE(sat)

*hFE1

*hFE2

Cob

230

MHz

VCE=-10V, IC=-500mA, f=20MHz

*Pulse Test : Pulse Width ≤380us, Duty Cycle≤2%

HSMC Product Specification

中文翻译

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