是否Rohs认证: | 不符合 | 生命周期: | Obsolete |
零件包装代码: | SOIC | 包装说明: | PLASTIC, EPSOIC-8 |
针数: | 8 | Reach Compliance Code: | not_compliant |
ECCN代码: | EAR99 | HTS代码: | 8542.39.00.01 |
风险等级: | 5.09 | Is Samacsys: | N |
高边驱动器: | YES | 接口集成电路类型: | HALF BRIDGE BASED MOSFET DRIVER |
JESD-30 代码: | R-PDSO-G8 | JESD-609代码: | e0 |
长度: | 4.89 mm | 湿度敏感等级: | 2 |
功能数量: | 1 | 端子数量: | 8 |
最高工作温度: | 125 °C | 最低工作温度: | -40 °C |
标称输出峰值电流: | 2 A | 封装主体材料: | PLASTIC/EPOXY |
封装代码: | HLSOP | 封装等效代码: | SOP8,.25 |
封装形状: | RECTANGULAR | 封装形式: | SMALL OUTLINE, HEAT SINK/SLUG, LOW PROFILE |
峰值回流温度(摄氏度): | NOT SPECIFIED | 电源: | 12 V |
认证状态: | Not Qualified | 座面最大高度: | 1.68 mm |
子类别: | MOSFET Drivers | 最大供电电压: | 14 V |
最小供电电压: | 9 V | 标称供电电压: | 12 V |
表面贴装: | YES | 技术: | CMOS |
温度等级: | AUTOMOTIVE | 端子面层: | Tin/Lead (Sn/Pb) |
端子形式: | GULL WING | 端子节距: | 1.27 mm |
端子位置: | DUAL | 处于峰值回流温度下的最长时间: | NOT SPECIFIED |
断开时间: | 0.045 µs | 接通时间: | 0.045 µs |
宽度: | 3.9 mm | Base Number Matches: | 1 |
型号 | 品牌 | 获取价格 | 描述 | 数据表 |
HIP2100EIBZ | INTERSIL |
获取价格 |
100V/2A Peak, Low Cost, High Frequency Half Bridge Driver | |
HIP2100IB | INTERSIL |
获取价格 |
100V/2A Peak, Low Cost, High Frequency Half Bridge Driver | |
HIP2100IBT | INTERSIL |
获取价格 |
100V/2A Peak, Low Cost, High Frequency Half Bridge Driver | |
HIP2100IBZ | INTERSIL |
获取价格 |
100V/2A Peak, Low Cost, High Frequency Half Bridge Driver | |
HIP2100IBZT | ROCHESTER |
获取价格 |
2A HALF BRDG BASED MOSFET DRIVER, PDSO8, ROHS COMPLIANT, PLASTIC, MS-012AA, SOIC-8 | |
HIP2100IR | INTERSIL |
获取价格 |
100V/2A Peak, Low Cost, High Frequency Half Bridge Driver | |
HIP2100IR4 | INTERSIL |
获取价格 |
100V/2A Peak, Low Cost, High Frequency Half Bridge Driver | |
HIP2100IR4Z | INTERSIL |
获取价格 |
100V/2A Peak, Low Cost, High Frequency Half Bridge Driver | |
HIP2100IR4ZT | ROCHESTER |
获取价格 |
2 A HALF BRDG BASED MOSFET DRIVER, PDSO12, 4 X 4 MM, ROHS COMPLIANT, PLASTIC, MO-229VGGD-2 | |
HIP2100IRT | RENESAS |
获取价格 |
2A HALF BRDG BASED MOSFET DRIVER, QCC16, 5 X 5 MM, PLASTIC, MO-220VHHB, QFN-16 |