是否Rohs认证: | 不符合 | 生命周期: | Obsolete |
零件包装代码: | DFN, QFN, SOIC | 包装说明: | LSOP, SOP8,.25 |
针数: | 12, 16, 8 | Reach Compliance Code: | not_compliant |
ECCN代码: | EAR99 | HTS代码: | 8542.39.00.01 |
风险等级: | 5.07 | 高边驱动器: | YES |
接口集成电路类型: | HALF BRIDGE BASED MOSFET DRIVER | JESD-30 代码: | R-PDSO-G8 |
JESD-609代码: | e0 | 长度: | 4.89 mm |
湿度敏感等级: | 2 | 功能数量: | 1 |
端子数量: | 8 | 最高工作温度: | 125 °C |
最低工作温度: | -40 °C | 标称输出峰值电流: | 2 A |
封装主体材料: | PLASTIC/EPOXY | 封装代码: | LSOP |
封装等效代码: | SOP8,.25 | 封装形状: | RECTANGULAR |
封装形式: | SMALL OUTLINE, LOW PROFILE | 峰值回流温度(摄氏度): | 240 |
电源: | 12 V | 认证状态: | Not Qualified |
座面最大高度: | 1.68 mm | 子类别: | MOSFET Drivers |
最大供电电压: | 14 V | 最小供电电压: | 9 V |
标称供电电压: | 12 V | 表面贴装: | YES |
技术: | CMOS | 温度等级: | AUTOMOTIVE |
端子面层: | Tin/Lead (Sn/Pb) | 端子形式: | GULL WING |
端子节距: | 1.27 mm | 端子位置: | DUAL |
处于峰值回流温度下的最长时间: | NOT SPECIFIED | 断开时间: | 0.056 µs |
接通时间: | 0.056 µs | 宽度: | 3.9 mm |
Base Number Matches: | 1 |
型号 | 品牌 | 获取价格 | 描述 | 数据表 |
HIP2101EIBT | RENESAS |
获取价格 |
2A HALF BRDG BASED MOSFET DRIVER, PDSO8, PLASTIC, SOIC-8 | |
HIP2101EIBT | ROCHESTER |
获取价格 |
2 A HALF BRDG BASED MOSFET DRIVER, PDSO8, PLASTIC, SOIC-8 | |
HIP2101EIB-T | INTERSIL |
获取价格 |
100V/2A Peak, Low Cost, High Frequency Half Bridge Driver | |
HIP2101EIBZ | RENESAS |
获取价格 |
100V/2A Peak High-Frequency Half Bridge Driver with TTL Logic Inputs; DFN12, QFN16, SOIC8; | |
HIP2101EIBZ | INTERSIL |
获取价格 |
100V/2A Peak, Low Cost, High Frequency Half Bridge Driver | |
HIP2101EIBZT | RENESAS |
获取价格 |
100V/2A Peak High-Frequency Half Bridge Driver with TTL Logic Inputs; DFN12, QFN16, SOIC8; | |
HIP2101EIBZ-T | INTERSIL |
获取价格 |
100V/2A Peak, Low Cost, High Frequency Half Bridge Driver | |
HIP2101IB | INTERSIL |
获取价格 |
100V/2A Peak, Low Cost, High Frequency Half Bridge Driver | |
HIP2101IBT | RENESAS |
获取价格 |
2A HALF BRDG BASED MOSFET DRIVER, PDSO8, PLASTIC, MS-012AA, SOIC-8 | |
HIP2101IB-T | INTERSIL |
获取价格 |
100V/2A Peak, Low Cost, High Frequency Half Bridge Driver |