Datasheet > HIP0061AS2

HIP0061AS2

更新时间： 2024-11-14 22:33:31

品牌	Logo	应用领域
英特矽尔 - INTERSIL		晶体晶体管
页数	文件大小	规格书
9页	63K
描述
60V, 3.5A, 3-Transistor Common Source ESD Protected Power MOSFET Array

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HIP0061AS2 数据手册

HIP0061

60V, 3.5A, 3-Transistor Common Source

ESD Protected Power MOSFET Array

December 1997

Features

Description

• Three 3.5A Power MOS N-Channel Transistors

• Output Voltage to 60V

The HIP0061 is a power MOSFET array that consists of

three matched N-Channel enhancement mode MOS transis-

tors connected in a common source conﬁguration. The

advanced Harris PASIC2 process technology used in this

product utilizes efﬁcient geometries that provides outstand-

ing device performance and ruggedness.

• r

DS(ON)

. . . . . 0.225Ω Max Per Transistor at V = 10V

• Pulsed Current . . . . . . . . . . . . . . . .10A Each Transistor

• Avalanche Energy . . . . . . . . . . 100mJ Each Transistor

• Grounded Tab Eliminates Heat Sink Isolation

The HIP0061 is designed to integrate three power devices in

one chip thus providing board layout area and heat sink sav-

ings for applications such as Motor Controls, Lamps,

Solenoids and Resistive Loads.

Applications

• Automotive

Symbol

• Appliance

• Industrial Control

• Robotics

DRAIN1

DRAIN2

DRAIN3

• Relay, Solenoid, Lamp Drivers

GATE2

GATE1

GATE3

Ordering Information

TEMP.

PKG.

NO.

PART NUMBER RANGE ( C)

PACKAGE

HIP0061AS1

HIP0061AS2

-40 to 125 7 Ld Staggered

Vertical SIP

Z7.05C

SOURCE, TAB

-40 to 125 7 Ld Gullwing SIP Z7.05B

Pinouts

HIP0061AS1

(SIP - VERTICAL)

TOP VIEW

HIP0061AS2

(SIP - GULLWING)

TOP VIEW

DRAIN3

GATE3

DRAIN2

SOURCE

GATE2

DRAIN1

GATE 1

DRAIN3

GATE3

DRAIN2

SOURCE

GATE2

DRAIN1

GATE 1

TAB

TAB (SOURCE) INTERNALLY CONNECTED TO PIN 4

CAUTION: These devices are sensitive to electrostatic discharge; follow proper IC Handling Procedures.

File Number 3982.3

12 3 4 5 6 7...9

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