Datasheet > HGE055NE4A

HGE055NE4A

更新时间： 2024-11-13 17:01:19

品牌	Logo	应用领域
华润微 - CRMICRO		/
页数	文件大小	规格书
10页	673K
描述
SOP-8

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HGE055NE4A 数据手册

Silicon N-Channel Power MOSFET

HGE055NE4A

○

General Description：

V_DSS

HGE055NE4A, the silicon N-channel Enhanced

VDMOSFETs, is obtained by the high density Trench technology

which reduce the conduction loss, improve switching

performance and enhance the avalanche energy. The transistor

can be used in various power switching circuit for system

miniaturization and higher efficiency. The package form is SOP8,

which accords with the RoHS standard.

I_D

P_D(T_a=25℃)

R_{DS(ON) Typ@Vgs=10V}

R_{DS(ON) Typ@Vgs=4.5V}

3.1

4.4

6.5

mΩ

Features：

 Fast Switching

 Low ON Resistance(Rdson≤5.5mΩ)

 Low Gate Charge

 Low Reverse transfer capacitances

 100% Single Pulse avalanche energy Test

Applications：



Power switch circuit of adaptor and charger.

Synchronus Rectification in DC/DC Converters

Absolute（Ta= 25℃ unless otherwise specified）：

Parameter

Symbol

V_DSS

Rating

Units

Drain-to-Source Voltage

Continuous Drain Current

I_D

Continuous Drain Current T_C= 100 °C

Pulsed Drain Current

11.9

±18

I_DM

Gate-to-Source Voltage

V_GS

Single Pulse Avalanche Energy

Power Dissipation

115.5

℃

E_AS

3.1

P_D

Operating Junction and Storage Temperature Range

T_J，T_stg

150，–55 to 150

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