Datasheet > HGE090N06A

HGE090N06A

更新时间： 2024-11-13 15:19:27

品牌	Logo	应用领域
华润微 - CRMICRO		/
页数	文件大小	规格书
10页	788K
描述
SOP-8

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HGE090N06A 数据手册

Silicon N-Channel Power MOSFET

HGE090N06A

○

General Description：

V_DSS

HGE090N06A, the silicon N-channel Enhanced VDMOSFETs,

is obtained by the high density Trench technology which reduce

the conduction loss, improve switching performance and enhance

the avalanche energy. The transistor can be used in various power

switching circuit for system miniaturization and higher efficiency.

The package form is SOP8, which accords with the RoHS

standard.

I_D

P_D(T_a=25℃)

R_{DS(ON) Typ@Vgs=10V}

R_{DS(ON) Typ@Vgs=4.5V}

3.1

8.5

mΩ

Features：

 Fast Switching

 Low ON Resistance

 Low Gate Charge

 Low Reverse transfer capacitances

 100% Single Pulse avalanche energy Test

 Halogen Free

Applications：



Power switch circuit of adaptor and charger.

Synchronus Rectification in DC/DC Converters

Absolute（TA= 25℃ unless otherwise specified）：

Parameter

Symbol

V_DSS

Rating

Units

Drain-to-Source Voltage

Continuous Drain Current

I_D

Continuous Drain Current T_A= 100 °C

Pulsed Drain Current

9.6

I_DM

Gate-to-Source Voltage

V_GS

±20

Single Pulse Avalanche Energy

Power Dissipation

145

3.1

℃

E_AS

P_D

Operating Junction and Storage Temperature Range

T_J，T_stg

150，–55 to 150

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