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HFW50N06 PDF预览

HFW50N06

更新时间: 2024-10-26 10:48:35
品牌 Logo 应用领域
SEMIHOW /
页数 文件大小 规格书
8页 642K
描述
60V N-Channel MOSFET

HFW50N06 数据手册

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Nov 2009  
BVDSS = 60 V  
RDS(on) = 18 mΩ  
HFW50N06 / HFI50N06  
60V N-Channel MOSFET  
ID = 50 A  
D2-PAK I2-PAK  
FEATURES  
Originative New Design  
HFW50N06  
HFI50N06  
Superior Avalanche Rugged Technology  
Robust Gate Oxide Technology  
Very Low Intrinsic Capacitances  
Excellent Switching Characteristics  
Unrivalled Gate Charge : 40 nC (Typ.)  
Extended Safe Operating Area  
Lower RDS(ON) : 0.018 Ω (Typ.) @VGS=10V  
100% Avalanche Tested  
1.Gate 2. Drain 3. Source  
Absolute Maximum Ratings  
TC=25unless otherwise specified  
Symbol  
Parameter  
Value  
Units  
V
VDSS  
Drain-Source Voltage  
Drain Current  
60  
50  
ID  
– Continuous (TC = 25)  
– Continuous (TC = 100)  
A
Drain Current  
35.4  
200  
±25  
490  
50  
A
IDM  
Drain Current  
– Pulsed  
(Note 1)  
A
VGS  
EAS  
IAR  
Gate-Source Voltage  
V
Single Pulsed Avalanche Energy  
Avalanche Current  
(Note 2)  
(Note 1)  
(Note 1)  
(Note 3)  
mJ  
A
EAR  
dv/dt  
PD  
Repetitive Avalanche Energy  
Peak Diode Recovery dv/dt  
Power Dissipation (TA = 25)*  
12  
mJ  
V/ns  
7.0  
3.75  
120  
W
W
Power Dissipation (TC = 25)  
- Derate above 25℃  
0.8  
W/℃  
TJ, TSTG  
TL  
Operating and Storage Temperature Range  
-55 to +175  
Maximum lead temperature for soldering purposes,  
1/8” from case for 5 seconds  
300  
Thermal Resistance Characteristics  
Symbol  
Parameter  
Typ.  
Max.  
Units  
RθJC  
Rθ JA  
Junction-to-Case  
--  
--  
--  
1.24  
Junction-to-Ambient*  
Junction-to-Ambient  
40  
/W  
62.5  
RθJA  
* When mounted on the minimum pad size recommended (PCB Mount)  
SEMIHOW REV.A0,Mar 2009  

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