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HFW5N60S PDF预览

HFW5N60S

更新时间: 2024-10-27 05:36:07
品牌 Logo 应用领域
SEMIHOW /
页数 文件大小 规格书
8页 844K
描述
600V N-Channel MOSFET

HFW5N60S 数据手册

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Sep 2009  
BVDSS = 600 V  
DS(on) typ = 2.0 Ω  
R
HFW5N60S / HFI5N60S  
600V N-Channel MOSFET  
ID = 4.5 A  
D2-PAK I2-PAK  
FEATURES  
Originative New Design  
HFW5N60S  
HFI5N60S  
Superior Avalanche Rugged Technology  
Robust Gate Oxide Technology  
Very Low Intrinsic Capacitances  
Excellent Switching Characteristics  
Unrivalled Gate Charge : 10.5 nC (Typ.)  
Extended Safe Operating Area  
Lower RDS(ON) : 2.0 Ω (Typ.) @VGS=10V  
100% Avalanche Tested  
1.Gate 2. Drain 3. Source  
Absolute Maximum Ratings  
TC=25unless otherwise specified  
Symbol  
Parameter  
Value  
Units  
V
VDSS  
Drain-Source Voltage  
Drain Current  
600  
4.5  
2.6  
18  
ID  
– Continuous (TC = 25)  
– Continuous (TC = 100)  
A
Drain Current  
A
IDM  
VGS  
EAS  
IAR  
Drain Current  
– Pulsed  
(Note 1)  
A
Gate-Source Voltage  
±30  
210  
4.5  
10  
V
Single Pulsed Avalanche Energy  
Avalanche Current  
(Note 2)  
(Note 1)  
(Note 1)  
(Note 3)  
mJ  
A
EAR  
dv/dt  
PD  
Repetitive Avalanche Energy  
Peak Diode Recovery dv/dt  
Power Dissipation (TA = 25) *  
mJ  
V/ns  
4.5  
3.13  
100  
W
W
Power Dissipation (TC = 25)  
- Derate above 25℃  
0.8  
W/℃  
TJ, TSTG  
TL  
Operating and Storage Temperature Range  
-55 to +150  
Maximum lead temperature for soldering purposes,  
1/8” from case for 5 seconds  
300  
Thermal Resistance Characteristics  
Symbol  
Parameter  
Typ.  
Max.  
Units  
RθJC  
RθJA  
Junction-to-Case  
--  
--  
--  
1.25  
Junction-to-Ambient*  
Junction-to-Ambient  
40  
℃/W  
62.5  
RθJA  
* When mounted on the minimum pad size recommended (PCB Mount)  
SEMIHOW REV.A0,Sep 2009  

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