Datasheet > HFM101-M

HFM101-M

更新时间： 2024-10-29 22:33:23

品牌	Logo	应用领域
美丽微 - FORMOSA		/
页数	文件大小	规格书
2页	74K
描述
Ultra fast recovery type

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中文翻译

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数据手册

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HFM101-M 数据手册

Chip Silicon Rectifier

Formosa MS

HFM101-M THRU HFM107-M

Ultra fast recovery type

Features

SOD-123

Plastic package has Underwriters Laboratory

Flammability Classification 94V-O Utilizing Flame

RetardantEpoxy Molding Compound.

0.161(4.1)

0.146(3.7)

0.012(0.3) Typ.

For surface mounted applications.

0.071(1.8)

0.055(1.4)

Exceeds environmental standards of MIL-S-19500 /

228

0.110(2.8)

0.094(2.4)

Low leakage current.

0.063(1.6)

0.055(1.4)

0.035(0.9) Typ.

Mechanical data

Dimensions in inches and (millimeters)

Case : Molded plastic, JEDECSOD-123 / MINISMA

Terminals : Solder plated, solderable per MIL-STD-750,

Method 2026

Polarity : Indicated by cathode band

Mounting Position : Any

Weight : 0.04 gram

MAXIMUM RATINGS (AT T_A=25 C unless otherwise noted)

PARAMETER

CONDITIONS

Symbol

I_O

MIN.

TYP.

MAX.

1.0

UNIT

Ambient temperature = 50 C

Forward rectified current

8.3ms single half sine-wave superimposed on

rate load (JEDEC methode)

Forward surge current

I_FSM

V_R= V_RRMT_A= 25 C

5.0

150

Reverse current

I_R

V_R= V_RRMT_A= 100 C

Thermal resistance

Junction to ambient

C / w

Diode junction capacitance

Storage temperature

f=1MHz and applied 4vDC reverse voltage

C_J

T_STG

-55

+150

Operating

MARKING

SYMBOLS

V_RRM

V_RMS

V_R

V_F

T_RR

temperature

CODE

( C)

(V)

(nS)

HFM101-M

HFM102-M

HFM103-M

HFM104-M

HFM105-M

HFM106-M

HFM107-M

1.0

100

200

300

400

600

800

100

200

300

400

600

800

*1 Repetitive peak reverse voltage

*2 RMS voltage

140

210

280

420

560

-55 to +150

1.3

*3 Continuous reverse voltage

*4 Maximum forward voltage

*5 Reverse recovery time

1.7

中文翻译

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