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HFM101W-W PDF预览

HFM101W-W

更新时间: 2024-10-30 13:08:19
品牌 Logo 应用领域
RECTRON 整流二极管光电二极管功效
页数 文件大小 规格书
2页 31K
描述
Rectifier Diode, 1 Element, 1A, 50V V(RRM), Silicon, ROHS COMPLIANT, PLASTIC, SMX, 2 PIN

HFM101W-W 技术参数

是否无铅: 不含铅是否Rohs认证: 符合
生命周期:Active包装说明:ROHS COMPLIANT, PLASTIC, SMX, 2 PIN
针数:2Reach Compliance Code:compliant
ECCN代码:EAR99HTS代码:8541.10.00.80
风险等级:5.63其他特性:METALLURGICALLY BONDED
配置:SINGLE二极管元件材料:SILICON
二极管类型:RECTIFIER DIODEJESD-30 代码:R-PDSO-C2
JESD-609代码:e3元件数量:1
端子数量:2最高工作温度:150 °C
最低工作温度:-65 °C最大输出电流:1 A
封装主体材料:PLASTIC/EPOXY封装形状:RECTANGULAR
封装形式:SMALL OUTLINE峰值回流温度(摄氏度):265
认证状态:Not Qualified最大重复峰值反向电压:50 V
最大反向恢复时间:0.05 µs表面贴装:YES
端子面层:Matte Tin (Sn)端子形式:C BEND
端子位置:DUAL处于峰值回流温度下的最长时间:NOT SPECIFIED
Base Number Matches:1

HFM101W-W 数据手册

 浏览型号HFM101W-W的Datasheet PDF文件第2页 
HFM101  
THRU  
RECTRON  
SEMICONDUCTOR  
TECHNICAL SPECIFICATION  
HFM108  
SURFACE MOUNT GLASS PASSIVATED  
HIGH EFFICIENCY SILICON RECTIFIER  
VOLTAGE RANGE 50 to 1000 Volts CURRENT 1.0 Ampere  
FEATURES  
* Glass passivated device  
* Ideal for surface mounted applications  
* Low leakage current  
* Metallurgically bonded construction  
* Mounting position: Any  
* Weight: 0.057 gram  
DO-214AC  
MECHANICAL DATA  
* Epoxy : Device has UL flammability classification 94V-0  
(
)
0.067 1.70  
(
)
)
0.110 2.79  
(
)
0.051 1.29  
(
0.086 2.18  
(
)
0.180 4.57  
(
)
0.160 4.06  
(
)
0.012 0.305  
(
)
0.006 0.152  
(
)
0.091 2.31  
(
)
)
0.067 1.70  
(
0.059 1.50  
(
)
)
0.008 0.203  
MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS  
Ratings at 25 oC ambient temperature unless otherwise specified.  
Single phase, half wave, 60 Hz, resistive or inductive load.  
For capacitive load, derate current by 20%.  
(
)
0.035 0.89  
(
0.004 0.102  
(
)
)
0.209 5.31  
(
0.185 4.70  
Dimensions in inches and (millimeters)  
MAXIMUM RATINGS (At T  
A
= 25oC unless otherwise noted)  
RATINGS  
SYMBOL  
HFM101 HFM102 HFM103 HFM104 HFM105 HFM106 HFM107 HFM108  
UNITS  
Maximum Recurrent Peak Reverse Voltage  
Maximum RMS Volts  
50  
35  
50  
100  
70  
200  
140  
200  
600  
420  
600  
V
RRM  
RMS  
300  
210  
300  
400  
280  
400  
800  
560  
800  
1000  
700  
Volts  
Volts  
Volts  
V
Maximum DC Blocking Voltage  
Maximum Average Forward Current  
V
DC  
100  
1000  
I
O
1.0  
30  
Amps  
Amps  
at TA  
= 50oC  
Peak Forward Surge Current 8.3 ms single half sine-wave  
superimposed on rated load (JEDEC method)  
I
FSM  
Typical Junction Capacitance (Note 2)  
CJ  
15  
12  
pF  
20  
-65 to + 150  
m J  
Pulse energy, non repetitive(inductive load switch off )  
Operating and Storage Temperature Range  
ER  
0C  
T
J
, TSTG  
ELECTRICAL CHARACTERISTICS (At TA  
= 25oC unless otherwise noted)  
UNITS  
Volts  
HFM104  
HFM105 HFM106 HFM107 HFM108  
CHARACTERISTICS  
Maximum Forward Voltage at 1.0A DC  
Maximum Full Load Reverse Current, Full cycle Average  
SYMBOL  
HFM101 HFM102 HFM103  
1.0  
1.7  
VF  
1.3  
TA  
= 55oC  
50  
uAmps  
Maximum DC Reverse Current at  
Rated DC Blocking Voltage  
@T  
@T  
A
= 25oC  
5.0  
uAmps  
uAmps  
I
R
A
= 125oC  
100  
Maximum Reverse Recovery Time (Note 1)  
trr  
50  
75  
nSec  
NOTES : 1. Test Conditions: I  
F
=0.5A, I  
R=-1.0A, IRR=-0.25A.  
2002-2  
2. Measured at 1 MH  
Z
and applied reverse voltage of 4.0 volts.  

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