Datasheet > HFH6N90

HFH6N90

更新时间： 2022-12-16 13:39:11

品牌	Logo	应用领域
SEMIHOW		/
页数	文件大小	规格书
7页	932K
描述
900V N-Channel MOSFET

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中文翻译

获取价格

数据手册

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HFH6N90 数据手册

Typical Characteristics

V_GS

Top :

15.0 V

10.0 V

8.0 V

7.0 V

6.5 V

6.0 V

10¹

10⁰

10¹

150^oC

Bottom : 5.5 V

25^oC

-55^oC

10⁰

-1

※ Notes :

1. 250μ s Pulse Test

2. T_C= 25 ℃

※ Notes :

1. V_DS= 50V

2. 250μ s Pulse Test

-1

-2

-1

10⁰

10¹

V_GS, Gate-Source Voltage [V]

V_DS, Drain-Source Voltage [V]

Figure 1. On Region Characteristics

Figure 2. Transfer Characteristics

4.5

4.0

3.5

3.0

2.5

2.0

1.5

10¹

V_GS= 10V

V_GS= 20V

10⁰

150 ℃

25℃

※ Notes :

1. V_GS= 0V

2. 250μ s Pulse Test

※ Note : T = 25 ℃

-1

0.2

0.4

0.6

0.8

1.0

1.2

1.4

V_SD, Source-Drain voltage [V]

I_D, Drain Current [A]

Figure 4. Body Diode Forward Voltage

Variation with Source Current

and Temperature

Figure 3. On Resistance Variation vs

Drain Current and Gate Voltage

2500

2000

1500

1000

500

_iss= C_gs+ C_gd(C_ds= shorted)

C_oss= C_ds+ C_gd

_rss= C_gd

V_DS= 180V

V_DS= 450V

V_DS= 720V

iss

C_oss

※ Notes :

1. V_GS= 0 V

2. f = 1 MHz

rss

※ Note : I_D= 6.0A

-1

10⁰

10¹

Q_G, Total Gate Charge [nC]

V_DS, Drain-Source Voltage [V]

Figure 5. Capacitance Characteristics

Figure 6. Gate Charge Characteristics

◎ SEMIHOW REV.A0,Mar 2010

1 234 5 6 7

中文翻译

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