Datasheet > HFH18N50S

HFH18N50S

更新时间： 2022-12-18 01:18:06

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描述
500V N-Channel MOSFET

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数据手册

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HFH18N50S 数据手册

Electrical Characteristics T_C=25 °C unless otherwise specified

Symbol

Parameter

Test Conditions

Min

Typ

Max Units

On Characteristics

V_GS

Gate Threshold Voltage

V_DS= V_GS, I_D= 250 ㎂

2.0

4.0

R_DS(ON)Static Drain-Source

On-Resistance

V_GS= 10 V, I_D= 9.5 A

0.220 0.265

ꢀ

Off Characteristics

BV_DSS

Drain-Source Breakdown Voltage V_GS= 0 V, I_D= 250 ㎂

500

ΔBV_DSSBreakdown Voltage Temperature

I_D= 250 ㎂, Referenced to 25℃

0.5

V/℃

/ΔT_J

Coefficient

I_DSS

V_DS= 500 V, V_GS= 0 V

㎂

Zero Gate Voltage Drain Current

V_DS= 400 V, T_C= 125℃

I_GSSF

I_GSSR

Gate-Body Leakage Current,

Forward

_GS= 30 V, V_DS= 0 V

_GS= -30 V, V_DS= 0 V

100

㎁

Gate-Body Leakage Current,

Reverse

-100

Dynamic Characteristics

C_iss

Input Capacitance

2850 3700

㎊

V_DS= 25 V, V_GS= 0 V,

f = 1.0 MHz

C_oss

C_rss

Output Capacitance

310

400

Reverse Transfer Capacitance

Switching Characteristics

t_d(on)

Turn-On Time

165

120

340

200

190

㎱

V_DS= 250 V, I_D= 19 A,

t_r

t_d(off)

t_f

Turn-On Rise Time

Turn-Off Delay Time

Turn-Off Fall Time

Total Gate Charge

Gate-Source Charge

Gate-Drain Charge

R_G= 25 ꢀ

㎱

(Note 4,5)

㎱

Q_g

V_DS= 400V, I_D= 19 A,

V_GS= 10 V

Q_gs

Q_gd

(Note 4,5)

Source-Drain Diode Maximum Ratings and Characteristics

I_S

Continuous Source-Drain Diode Forward Current

Pulsed Source-Drain Diode Forward Current

1.4

I_SM

V_SD

trr

Source-Drain Diode Forward Voltage I_S= 19 A, V_GS= 0 V

Reverse Recovery Time

Reverse Recovery Charge

500

5.4

㎱

μC

I_S= 19 A, V_GS= 0 V

di_F/dt = 100 A/μs (Note 4)

Qrr

Notes ;

1. Repetitive Rating : Pulse width limited by maximum junction temperature

2. L=4.7mH, I_AS=19A, V_DD=50V, R_G=25Ω, Starting T_J=25°C

3. I_SD≤19A, di/dt≤200A/μs, V_DD≤BV_DSS, Starting T_J=25 °C

4. Pulse Test : Pulse Width ≤ 300μs, Duty Cycle ≤ 2%

5. Essentially Independent of Operating Temperature

◎ SEMIHOW REV.A0,Nov 2009

123 4 5 6 7

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