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HFA35HB120C PDF预览

HFA35HB120C

更新时间: 2024-11-30 10:47:51
品牌 Logo 应用领域
英飞凌 - INFINEON 整流二极管局域网超快软恢复二极管快速软恢复二极管
页数 文件大小 规格书
5页 149K
描述
Ultrafast, Soft Recovery Diode

HFA35HB120C 技术参数

是否Rohs认证: 不符合生命周期:Active
包装说明:HERMETIC SEALED PACKAGE-3Reach Compliance Code:compliant
ECCN代码:EAR99HTS代码:8541.10.00.80
风险等级:5.48Is Samacsys:N
应用:ULTRA FAST SOFT RECOVERY外壳连接:ISOLATED
配置:COMMON CATHODE, 2 ELEMENTS二极管元件材料:SILICON
二极管类型:RECTIFIER DIODE最大正向电压 (VF):4.3 V
JEDEC-95代码:TO-254AAJESD-30 代码:S-MSFM-P3
JESD-609代码:e0最大非重复峰值正向电流:80 A
元件数量:2相数:1
端子数量:3最高工作温度:150 °C
最大输出电流:15 A封装主体材料:METAL
封装形状:SQUARE封装形式:FLANGE MOUNT
峰值回流温度(摄氏度):NOT SPECIFIED认证状态:Not Qualified
最大重复峰值反向电压:1200 V最大反向恢复时间:0.1 µs
子类别:Rectifier Diodes表面贴装:NO
技术:AVALANCHE端子面层:Tin/Lead (Sn/Pb)
端子形式:PIN/PEG端子位置:SINGLE
处于峰值回流温度下的最长时间:NOT SPECIFIEDBase Number Matches:1

HFA35HB120C 数据手册

 浏览型号HFA35HB120C的Datasheet PDF文件第2页浏览型号HFA35HB120C的Datasheet PDF文件第3页浏览型号HFA35HB120C的Datasheet PDF文件第4页浏览型号HFA35HB120C的Datasheet PDF文件第5页 
PD-20371A  
HFA35HB120C  
Ultrafast, Soft Recovery Diode  
VR = 1200V  
PRELIMINARY  
HEXFREDTM  
(ISOLATED BASE)  
Features  
• Reduced RFI and EMI  
• Reduced Snubbing  
• Extensive Characterization of Recovery Parameters  
• Hermetic  
VF = 4.46V  
Qrr = 370nC  
• Electrically Isolated  
• Ceramic Eyelets  
di(rec)M/dt = 380A/µs  
ANODE COMMON ANODE  
CATHODE  
Description  
HEXFREDTM diodes are optimized to reduce losses and  
EMI/RFI in high frequency power conditioning systems.  
An extensive characterization of the recovery behavior  
for different values of current, temperature and di/dt  
simplifies the calculations of losses in the operating  
conditions. The softness of the recovery eliminates the  
need for a snubber in most applications. These devices  
are ideally suited for power converters, motors drives and  
other applications where switching losses are significant  
portion of the total losses.  
TO-254AA  
Absolute Maximum Ratings (per Leg)  
Parameter  
D.C. Reverse Voltage  
Max.  
1200  
Units  
V
VR  
IF @ TC = 100°C  
Continuous Forward Current   
15  
A
IFSM @ TC = 25°C Single Pulse Forward Current ‚  
130  
PD @ TC = 25°C  
Maximum Power Dissipation  
Operating Junction and  
63  
W
TJ  
-55 to +150  
°C  
TSTG  
Storage Temperature Range  
Thermal - Mechanical Characteristics  
Parameter  
Junction-to-Case, Single Leg Conducting  
Weight  
Typ.  
Max.  
2.0  
Units  
RθJC  
°C/W  
g
9.3  
Note:  D.C. = 50% rect. wave  
‚ 1/2 sine wave, 60 Hz , P.W. = 8.33 ms  
www.irf.com  
1
8/20/98  

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