HFA35HB60CPBF

更新时间： 2024-11-20 13:08:19

品牌	Logo	应用领域
英飞凌 - INFINEON		整流二极管局域网超快软恢复二极管快速软恢复二极管
页数	文件大小	规格书
5页	132K
描述
Rectifier Diode, Avalanche, 1 Phase, 2 Element, 30A, Silicon, TO-254AA, HERMETIC SEALED PACKAGE-3

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HFA35HB60CPBF 数据手册

PD-20379

HFA35HB60

Ultrafast, Soft Recovery Diode

HEXFRED^TM

(ISOLATED BASE)

V_R= 600V

V_F= 1.75V

Features

• Reduced RFI and EMI

• Reduced Snubbing

• Extensive Characterization of Recovery Parameters

• Hermetic

Q_rr= 290nC

• Electrically Isolated

• Ceramic Eyelets

di_(rec)M/dt = 400A/µs

CATHODE

ANODE

Description

HEXFRED diodes are optimized to reduce losses and

EMI/RFI in high frequency power conditioning systems.

An extensive characterization of the recovery behavior

for different values of current, temperature and di/dt

simplifies the calculations of losses in the operating

conditions. The softness of the recovery eliminates the

need for a snubber in most applications. These devices

are ideally suited for power converters, motors drives and

other applications where switching losses are significant

portion of the total losses.

TO-254AA

Absolute Maximum Ratings (per Leg)

Parameter

D.C. Reverse Voltage

Max.

600

Units

V_R

I_F@ T_C= 100°C

Continuous Forward Current

I_FSM@ T_C= 25°C Single Pulse Forward Current

225

P_D@ T_C= 25°C

Maximum Power Dissipation

Operating Junction and

T_J

-55 to +150

°C

T_STG

Storage Temperature Range

Thermal - Mechanical Characteristics

Parameter

Junction-to-Case, Single Leg Conducting

Weight

Typ.

—

Max.

1.5

Units

R_θJC

°C/W

9.3

—

Note: D.C. = 50% rect. wave

1/2 sine wave, 60 Hz , P.W. = 8.33 ms

www.irf.com

6/30/99

12 3 4 5

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