Datasheet > HFA32PA120CPBF_11

HFA32PA120CPBF_11

更新时间： 2022-11-07 09:20:05

品牌	Logo	应用领域
威世 - VISHAY		二极管超快软恢复二极管
页数	文件大小	规格书
8页	157K
描述
HEXFRED Ultrafast Soft Recovery Diode, 2 x 16 A

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VS-HFA32PA120CPbF

Vishay Semiconductors

HEXFRED^®

Ultrafast Soft Recovery Diode, 2 x 16 A

FEATURES

• Ultrafast and ultrasoft recovery

• Very low I_RRMand Q_rr

Base

common

• Compliant to RoHS Directive 2002/95/EC

• Designed and qualified for industrial level

cathode

BENEFITS

• Reduced RFI and EMI

• Reduced power loss in diode and switching transistor

• Higher frequency operation

• Reduced snubbing

• Reduced parts count

TO-247AC

Anode

Common

cathode

DESCRIPTION

VS-HFA32PA120CPbF is a state of the art ultrafast recovery

diode. Employing the latest in epitaxial construction and

advanced processing techniques it features a superb

combination of characteristics which result in performance

which is unsurpassed by any rectifier previously available.

With basic ratings of 1200 V and 16 A per leg continuous

current, the VS-HFA32PA120CPbF is especially well suited

for use as the companion diode for IGBTs and MOSFETs. In

addition to ultrafast recovery time, the HEXFRED^®product

line features extremely low values of peak recovery current

(I_RRM) and does not exhibit any tendency to “snap-off”

during the t_bportion of recovery. The HEXFRED features

combine to offer designers a rectifier with lower noise and

significantly lower switching losses in both the diode and the

switching transistor. These HEXFRED advantages can help

to significantly reduce snubbing, component count and

heatsink sizes. The HEXFRED VS-HFA32PA120CPbF is

ideally suited for applications in power supplies and power

conversion systems (such as inverters), motor drives, and

many other similar applications where high speed, high

efficiency is needed.

PRODUCT SUMMARY

Package

TO-247AC

2 x 16 A

1200 V

3.0 V

I_F(AV)

V_R

V_Fat I_F

t_rr(typ.)

T_Jmax.

Diode variation

30 ns

150 °C

Single die

ABSOLUTE MAXIMUM RATINGS

PARAMETER

SYMBOL

TEST CONDITIONS

VALUES

UNITS

Cathode to anode voltage

V_R

1200

per leg

per device

Maximum continuous forward current

I_F

T_C= 100 °C

Single pulse forward current

I_FSM

I_FRM

190

Maximum repetitive forward current

151

T_C= 25 °C

Maximum power dissipation

P_D

°C

_C= 100 °C

Operating junction and storage temperature range

T_J, T_Stg

- 55 to + 150

Document Number: 94073

Revision: 23-May-11

For technical questions within your region, please contact one of the following:

DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com

www.vishay.com

This document is subject to change without notice.

THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000

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