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HFA120FA120P PDF预览

HFA120FA120P

更新时间: 2024-11-07 05:35:59
品牌 Logo 应用领域
威世 - VISHAY 二极管超快软恢复二极管
页数 文件大小 规格书
7页 115K
描述
HEXFRED® Ultrafast Soft Recovery Diode, 120 A

HFA120FA120P 技术参数

是否无铅: 不含铅是否Rohs认证: 符合
生命周期:Obsolete包装说明:R-PUFM-X4
针数:4Reach Compliance Code:unknown
HTS代码:8541.10.00.80风险等级:5.57
其他特性:FREE WHEELING DIODE应用:UFSRHP
外壳连接:ISOLATED配置:SEPARATE, 2 ELEMENTS
二极管元件材料:SILICON二极管类型:RECTIFIER DIODE
最大正向电压 (VF):4 VJESD-30 代码:R-PUFM-X4
最大非重复峰值正向电流:350 A元件数量:2
相数:1端子数量:4
最高工作温度:150 °C最低工作温度:-55 °C
最大输出电流:60 A封装主体材料:PLASTIC/EPOXY
封装形状:RECTANGULAR封装形式:FLANGE MOUNT
峰值回流温度(摄氏度):NOT SPECIFIED最大功率耗散:337 W
认证状态:Not Qualified最大重复峰值反向电压:1200 V
最大反向电流:10000 µA最大反向恢复时间:0.145 µs
反向测试电压:1200 V子类别:Other Diodes
表面贴装:NO端子面层:Nickel (Ni)
端子形式:UNSPECIFIED端子位置:UPPER
处于峰值回流温度下的最长时间:NOT SPECIFIEDBase Number Matches:1

HFA120FA120P 数据手册

 浏览型号HFA120FA120P的Datasheet PDF文件第2页浏览型号HFA120FA120P的Datasheet PDF文件第3页浏览型号HFA120FA120P的Datasheet PDF文件第4页浏览型号HFA120FA120P的Datasheet PDF文件第5页浏览型号HFA120FA120P的Datasheet PDF文件第6页浏览型号HFA120FA120P的Datasheet PDF文件第7页 
HFA120FA120P  
Vishay High Power Products  
HEXFRED®  
Ultrafast Soft Recovery Diode, 120 A  
FEATURES  
• Fast recovery time characteristic  
1
4
• Electrically isolated base plate  
• Large creepage distance between terminal  
• Simplified mechanical designs, rapid assembly  
• UL pending  
2
3
SOT-227  
• Totally lead (Pb)-free  
• Designed and qualified for industrial level  
DESCRIPTION/APPLICATIONS  
The dual diode series configuration (HFA120FA120P) is  
used for output rectification or freewheeling/clamping  
operation and high voltage application.  
The semiconductor in the SOT-227 package is isolated from  
the copper base plate, allowing for common heatsinks and  
compact assemblies to be built.  
PRODUCT SUMMARY  
VR  
1200 V  
2.8 V  
VF (typical)  
trr (typical)  
IF(DC) at TC  
145 ns  
60 A at 62 °C  
These modules are intended for general applications such as  
HV power supplies, electronic welders, motor control and  
inverters.  
ABSOLUTE MAXIMUM RATINGS  
PARAMETER  
SYMBOL  
TEST CONDITIONS  
MAX.  
1200  
60  
UNITS  
Cathode to anode voltage  
Continuous forward current  
Single pulse forward current  
Maximum repetitive forward current  
VR  
V
IF  
TC = 62 °C  
TJ = 25 °C  
IFSM  
IFRM  
350  
A
Rated VR, square wave, 20 kHz, TC = 60 °C  
TC = 25 °C  
130  
337  
Maximum power dissipation  
PD  
W
T
C = 100 °C  
135  
RMS isolation voltage  
VISOL  
Any terminal to case, t = 1 minute  
2500  
V
Operating junction and storage  
temperature range  
TJ, TStg  
- 55 to + 150  
°C  
ELECTRICAL SPECIFICATIONS (TJ = 25 °C unless otherwise specified)  
PARAMETER  
SYMBOL  
TEST CONDITIONS  
MIN.  
TYP.  
MAX.  
UNITS  
Cathode to anode  
breakdown voltage  
VBR  
IR = 100 µA  
1200  
-
-
IF = 60 A  
-
-
-
-
-
2.8  
3.6  
2.7  
2.0  
2.7  
4.0  
5.3  
-
V
Forward voltage  
VFM  
IF = 120 A  
IF = 60 A, TJ = 125 °C  
VR = VR rated  
75  
10  
µA  
Reverse leakage current  
IRM  
TJ = 150 °C, VR = VR rated  
mA  
Document Number: 94608  
Revision: 16-Oct-08  
For technical questions, contact: ind-modules@vishay.com  
www.vishay.com  
1

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